- 专利标题: Light-concentrating structure with photosensitivity enhancing effect
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申请号: US17236204申请日: 2021-04-21
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公开(公告)号: US11594647B2公开(公告)日: 2023-02-28
- 发明人: Yuan-Ta Hsieh , Chia-Hsin Lee , Hann-Huei Tsai , Ying-Zong Juang , Jian Li , Bo-You Liu
- 申请人: NATIONAL APPLIED RESEARCH LABORATORIES
- 申请人地址: TW Taipei
- 专利权人: NATIONAL APPLIED RESEARCH LABORATORIES
- 当前专利权人: NATIONAL APPLIED RESEARCH LABORATORIES
- 当前专利权人地址: TW Taipei
- 代理机构: Rosenberg, Klein & Lee
- 主分类号: H01L31/0216
- IPC分类号: H01L31/0216 ; H01L31/103
摘要:
This invention provides a light-concentrating structure with photosensitivity enhancing effect, including the substrate, buried layer, first electrode layer, second electrode layer, dielectric layer and interconnection structure. The substrate is equipped with a housing space; the buried layer is arranged above the substrate with the housing space; the first electrode layer is arranged above the buried layer; the second electrode layer is arranged in the middle of the first electrode layer; the dielectric layer is arranged above the second electrode layer; the interconnection structure is arranged above the substrate and the first electrode layer surrounding the dielectric layer, which forms an opening and a light-concentrating recess groove.