Invention Grant
- Patent Title: Bulk-acoustic wave resonator
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Application No.: US16898835Application Date: 2020-06-11
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Publication No.: US11595022B2Publication Date: 2023-02-28
- Inventor: Won Han , Sung Wook Kim , Dae Hun Jeong , Sang Uk Son , Sang Heon Han , Jeong Hoon Ryou
- Applicant: Samsung Electro-Mechanics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: NSIP Law
- Priority: KR10-2019-0093323 20190731,KR10-2020-0031588 20200313
- Main IPC: H03H9/13
- IPC: H03H9/13 ; H03H9/25 ; H03H9/02

Abstract:
A bulk-acoustic wave resonator includes: a substrate; a lower electrode disposed on the substrate; a piezoelectric layer at least partially covering the lower electrode; and an upper electrode at least partially covering the piezoelectric layer. On a surface of the bulk-acoustic wave resonator, a centroid of an active area in which the lower electrode, the piezoelectric layer, and the upper electrode all overlap each other is aligned with a center of a rectangle defining an aspect ratio of the active area. The active area has a shape of a polygon symmetrical with respect to at least one axis passing through the center of the rectangle defining the aspect ratio. The aspect ratio is greater than or equal to 2 and less than or equal to 10.
Public/Granted literature
- US20210036683A1 BULK-ACOUSTIC WAVE RESONATOR Public/Granted day:2021-02-04
Information query
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