公开(公告)号：US11558026B2

公开(公告)日：2023-01-17

申请号：US16875225

申请日：2020-05-15

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Kyung Lee ,  Sang Heon Han ,  Ran Hee Shin ,  Jin Suk Son

IPC: H03H9/02 ,  H03H9/17 ,  H03H9/13

Abstract: A bulk-acoustic wave resonator may include: a substrate; a resonator unit including a first electrode disposed on the substrate, a piezoelectric layer disposed on the first electrode, and a second electrode disposed on the piezoelectric layer; and a protective layer disposed on a surface of the resonator unit. The protective layer is formed of a diamond film, and a grain size of the diamond film is 50 nm or more.

公开(公告)号：US20220239278A1

公开(公告)日：2022-07-28

申请号：US17307055

申请日：2021-05-04

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Sang Uk Son ,  Sung Wook Kim ,  Won Han ,  Jong Woon Kim ,  Jeong Hoon Ryou ,  Sang Heon Han

IPC: H03H9/17 ,  H03H9/02 ,  H03H9/13

Abstract: A bulk acoustic resonator includes a first electrode disposed on an upper side of a substrate, a piezoelectric layer disposed on an upper surface of the first electrode, and a second electrode disposed on an upper surface of the piezoelectric layer, wherein an upper surface of at least one of the first electrode and the second electrode has a recess region, wherein a depth of the recess region is D, a width of the recess region is W, and a resonance frequency is F, and ln is a natural logarithm, and wherein [{ln(D*W)}/(−0.59*F)] is [[ln{0.008 (μm)2}]/{−0.59*(3.5 GHz)}] or more and [[ln{0.022 (μm)2}]/{−0.59*(3.5 GHz)}] or less.

公开(公告)号：US11870419B2

公开(公告)日：2024-01-09

申请号：US17222018

申请日：2021-04-05

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Won Han ,  Sang Uk Son ,  Tae Yoon Kim ,  Chang Hyun Lim ,  Sang Heon Han ,  Jong Beom Kim

IPC: H03H9/17

CPC classification number: H03H9/173

Abstract: A bulk acoustic wave resonator includes a substrate, a first electrode, wherein a cavity is formed between the substrate and the first electrode, a piezoelectric layer disposed on the first electrode and overlapping at least a portion of the first electrode, a second electrode disposed on the piezoelectric layer and overlapping at least a portion of the piezoelectric layer, a passivation layer having at least a portion disposed on the second electrode and overlapping at least a portion of the second electrode, and a lower frame spaced apart from the substrate and having a portion of the cavity disposed therebetween. Any one of the second electrode and the passivation layer includes a protruding portion having a first thickness and an extended portion having a second thickness less than the first thickness, and an inner end of the lower frame and an end of the protruding portion are spaced apart horizontally.

公开(公告)号：US11595022B2

公开(公告)日：2023-02-28

申请号：US16898835

申请日：2020-06-11

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Won Han ,  Sung Wook Kim ,  Dae Hun Jeong ,  Sang Uk Son ,  Sang Heon Han ,  Jeong Hoon Ryou

IPC: H03H9/13 ,  H03H9/25 ,  H03H9/02

Abstract: A bulk-acoustic wave resonator includes: a substrate; a lower electrode disposed on the substrate; a piezoelectric layer at least partially covering the lower electrode; and an upper electrode at least partially covering the piezoelectric layer. On a surface of the bulk-acoustic wave resonator, a centroid of an active area in which the lower electrode, the piezoelectric layer, and the upper electrode all overlap each other is aligned with a center of a rectangle defining an aspect ratio of the active area. The active area has a shape of a polygon symmetrical with respect to at least one axis passing through the center of the rectangle defining the aspect ratio. The aspect ratio is greater than or equal to 2 and less than or equal to 10.

公开(公告)号：US12057822B2

公开(公告)日：2024-08-06

申请号：US17307055

申请日：2021-05-04

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Sang Uk Son ,  Sung Wook Kim ,  Won Han ,  Jong Woon Kim ,  Jeong Hoon Ryou ,  Sang Heon Han

IPC: H03H9/17 ,  H03H9/02 ,  H03H9/13

CPC classification number: H03H9/173 ,  H03H9/02015 ,  H03H9/02157 ,  H03H9/131 ,  H03H9/132

Abstract: A bulk acoustic resonator includes a first electrode disposed on an upper side of a substrate, a piezoelectric layer disposed on an upper surface of the first electrode, and a second electrode disposed on an upper surface of the piezoelectric layer, wherein an upper surface of at least one of the first electrode and the second electrode has a recess region, wherein a depth of the recess region is D, a width of the recess region is W, and a resonance frequency is F, and ln is a natural logarithm, and wherein [{ln(D*W)}/(−0.59*F)] is [[ln{0.008 (μm)2}]/{−0.59*(3.5 GHz)}] or more and [[ln{0.022 (μm)2}]/{−0.59*(3.5 GHz)}] or less.

公开(公告)号：US11558027B2

公开(公告)日：2023-01-17

申请号：US16362743

申请日：2019-03-25

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Dae Hun Jeong ,  Sung Wook Kim ,  Sang Uk Son ,  Sang Heon Han ,  Won Han

IPC: H01L41/00 ,  H02N2/00 ,  H03H9/02 ,  H03H9/17 ,  H03H9/13

Abstract: A bulk-acoustic wave resonator includes: a substrate; a membrane layer forming a cavity with the substrate; a lower electrode disposed on the membrane layer; an insertion layer disposed to cover at least a portion of the lower electrode; a piezoelectric layer disposed on the lower electrode to cover the insertion layer; and an upper electrode at least partially disposed on the piezoelectric layer, wherein the upper electrode includes a reflection groove disposed on the insertion layer.

公开(公告)号：US11558025B2

公开(公告)日：2023-01-17

申请号：US17074978

申请日：2020-10-20

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Jeong Hoon Ryou ,  Sang Uk Son ,  Sung Wook Kim ,  Won Han ,  Dae Hun Jeong ,  Sang Heon Han

IPC: H03H9/02 ,  H03H9/13 ,  H03H9/17

Abstract: A bulk-acoustic wave resonator includes: a first electrode; a piezoelectric layer at least partially disposed on an upper portion of the first electrode; and a second electrode disposed to cover at least a portion of the piezoelectric layer. The second electrode includes a frame disposed at an edge of an active region of the bulk-acoustic wave resonator, and the first electrode, the piezoelectric layer and the second electrode are disposed to overlap one another at the edge of the active region. The frame includes a wall disposed at the edge of the active region and a trench formed on an internal side of the wall. An internal boundary line of the trench has a concave-convex shape in a plane parallel to an upper surface of the frame.