公开(公告)号：US11870419B2

公开(公告)日：2024-01-09

申请号：US17222018

申请日：2021-04-05

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Won Han ,  Sang Uk Son ,  Tae Yoon Kim ,  Chang Hyun Lim ,  Sang Heon Han ,  Jong Beom Kim

IPC: H03H9/17

CPC classification number: H03H9/173

Abstract: A bulk acoustic wave resonator includes a substrate, a first electrode, wherein a cavity is formed between the substrate and the first electrode, a piezoelectric layer disposed on the first electrode and overlapping at least a portion of the first electrode, a second electrode disposed on the piezoelectric layer and overlapping at least a portion of the piezoelectric layer, a passivation layer having at least a portion disposed on the second electrode and overlapping at least a portion of the second electrode, and a lower frame spaced apart from the substrate and having a portion of the cavity disposed therebetween. Any one of the second electrode and the passivation layer includes a protruding portion having a first thickness and an extended portion having a second thickness less than the first thickness, and an inner end of the lower frame and an end of the protruding portion are spaced apart horizontally.

公开(公告)号：US11843365B2

公开(公告)日：2023-12-12

申请号：US17144602

申请日：2021-01-08

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Tae Kyung Lee ,  Won Han ,  Moon Chul Lee ,  Sang Uk Son ,  Hwa Sun Lee

IPC: H03H9/17 ,  H03H9/02

CPC classification number: H03H9/173 ,  H03H9/02118

Abstract: A bulk-acoustic wave resonator includes a resonator including a central portion in which a first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on a substrate, and an extension portion disposed along a periphery of the central portion; and an insertion layer disposed between the piezoelectric layer and the substrate in the extension portion to raise the piezoelectric layer. The insertion layer includes a first insertion layer having a first inclined surface formed along a side surface facing the central portion and a second inclined surface disposed between the first insertion layer and the piezoelectric layer and having a second inclined surface spaced apart from the first inclined surface with respect to a surface direction of the first electrode. The first insertion layer is thinner than the second insertion layer.

公开(公告)号：US11595022B2

公开(公告)日：2023-02-28

申请号：US16898835

申请日：2020-06-11

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Won Han ,  Sung Wook Kim ,  Dae Hun Jeong ,  Sang Uk Son ,  Sang Heon Han ,  Jeong Hoon Ryou

IPC: H03H9/13 ,  H03H9/25 ,  H03H9/02

Abstract: A bulk-acoustic wave resonator includes: a substrate; a lower electrode disposed on the substrate; a piezoelectric layer at least partially covering the lower electrode; and an upper electrode at least partially covering the piezoelectric layer. On a surface of the bulk-acoustic wave resonator, a centroid of an active area in which the lower electrode, the piezoelectric layer, and the upper electrode all overlap each other is aligned with a center of a rectangle defining an aspect ratio of the active area. The active area has a shape of a polygon symmetrical with respect to at least one axis passing through the center of the rectangle defining the aspect ratio. The aspect ratio is greater than or equal to 2 and less than or equal to 10.

公开(公告)号：US11271543B2

公开(公告)日：2022-03-08

申请号：US16193529

申请日：2018-11-16

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Won Han ,  Sang Uk Son ,  Tae Yoon Kim ,  Jong Woon Kim

IPC: H03H9/17 ,  H03H9/13 ,  H03H9/02

Abstract: A bulk acoustic wave resonator includes: a substrate; a first electrode disposed above the substrate; a piezoelectric layer disposed above at least a portion of the first electrode; and a second electrode disposed above at least a portion of the piezoelectric layer. A first gap is formed between the piezoelectric layer and one of the first and second electrodes. The first gap includes a first inner gap disposed in an active area of the bulk acoustic wave resonator, and having a first spacing distance between the piezoelectric layer and the one of the first and second electrodes, and a first outer gap disposed outwardly of the active area and having a second spacing distance, different than the first spacing distance, between the piezoelectric layer and the one of the first and second electrodes.

公开(公告)号：US10734968B2

公开(公告)日：2020-08-04

申请号：US15647660

申请日：2017-07-12

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Kyung Lee ,  Tae Yoon Kim ,  Dae Ho Kim ,  Chang Hyun Lim ,  Tae Hun Lee ,  Sang Kee Yoon ,  Jong Woon Kim ,  Won Han ,  Moon Chul Lee

IPC: H03H9/02 ,  H03H9/56 ,  H03H3/02 ,  H03H9/17 ,  H03H9/60 ,  H01L41/047 ,  H03H9/54

Abstract: A bulk acoustic resonator includes: a substrate including an upper surface on which a substrate protection layer is disposed; and a membrane layer forming a cavity together with the substrate, wherein a thickness deviation of either one or both of the substrate protection layer and the membrane layer is 170 Å or less.

公开(公告)号：US09722572B2

公开(公告)日：2017-08-01

申请号：US14508770

申请日：2014-10-07

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Seung Mo Lim ,  Ho Phil Jung ,  Won Han ,  Dong Joon Oh ,  Sung Wook Kim ,  Tae Joon Park

IPC: H01L41/18 ,  H03H9/19 ,  H03H9/13

CPC classification number: H03H9/19 ,  H03H9/13

Abstract: Embodiments of the invention provide a quartz vibrator, including a long side in a Y′ axis direction, a side in the Y′ axis direction including a first crystal face and a second crystal face formed thereon, and another side including an AT-cut quartz piece including a first crystal face and a second crystal face formed thereon and electrode layers formed on the AT-cut quartz piece.

公开(公告)号：US11329623B2

公开(公告)日：2022-05-10

申请号：US16934265

申请日：2020-07-21

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Kyung Lee ,  Won Han ,  Sang Uk Son ,  Hwa Sun Lee ,  Moon Chui Lee

IPC: H03H9/02 ,  H03H9/205 ,  H03H9/13 ,  H03H9/54

Abstract: A bulk-acoustic wave resonator includes a substrate, a first electrode disposed on the substrate, a piezoelectric layer covering at least a portion of the first electrode, and a second electrode covering at least a portion of the piezoelectric layer. When an active region, in which the first electrode and the second electrode are disposed to overlap each other, is viewed from above, among four sides of a rectangle with which at least three vertices of a polygon formed by the active region are in contact, a longest side is defined as a side B and a side connected to side B is defined as a side A, and an aspect ratio (side B/side A) is 1.3 to 3.

公开(公告)号：US11251767B2

公开(公告)日：2022-02-15

申请号：US16983209

申请日：2020-08-03

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Kyung Lee ,  Tae Yoon Kim ,  Dae Ho Kim ,  Chang Hyun Lim ,  Tae Hun Lee ,  Sang Kee Yoon ,  Jong Woon Kim ,  Won Han ,  Moon Chul Lee

IPC: H03H9/02 ,  H03H9/56 ,  H03H9/17 ,  H03H9/60 ,  H03H9/54 ,  H03H3/02 ,  H01L41/047

Abstract: A bulk acoustic resonator includes: a substrate including an upper surface on which a substrate protection layer is disposed; and a membrane layer forming a cavity together with the substrate, wherein a thickness deviation of either one or both of the substrate protection layer and the membrane layer is 170 Å or less.

公开(公告)号：US10903814B2

公开(公告)日：2021-01-26

申请号：US15789024

申请日：2017-10-20

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Won Han ,  Chang Hyun Lim ,  Yong Suk Kim ,  Seung Hun Han ,  Sung Jun Lee ,  Sang Kee Yoon ,  Tae Yoon Kim

IPC: H03H9/02 ,  H03H9/17 ,  H01L41/047 ,  H03H9/54

Abstract: A bulk acoustic wave resonator includes a membrane layer, together with a substrate, forming a cavity, a lower electrode disposed on the membrane layer, a piezoelectric layer disposed on a flat surface of the lower electrode and an upper electrode covering a portion of the piezoelectric layer. An overall region at a side of the piezoelectric layer is exposed to the air. The side of the piezoelectric layer has a gradient of 65° to 90° with respect to a top surface of the lower electrode.

公开(公告)号：US10833646B2

公开(公告)日：2020-11-10

申请号：US15702176

申请日：2017-09-12

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Chang Hyun Lim ,  Won Han ,  Moon Chul Lee ,  Tae Kyung Lee

IPC: H03H3/04 ,  H03H9/13 ,  H03H9/17 ,  H03H9/02 ,  H03H3/02 ,  H03H9/54

Abstract: A bulk-acoustic wave resonator includes: a membrane layer disposed on a substrate and forming a cavity; a lower electrode disposed on the membrane layer; a piezoelectric layer disposed on the lower electrode; an upper electrode disposed on the piezoelectric layer, and including a frame part disposed at an edge of an active area and having a thickness greater than that of a portion of the upper electrode disposed in a central portion of the active area; and a frequency adjusting layer disposed on the piezoelectric layer and the upper electrode. The frequency adjusting layer is excluded from an inclined surface of the frame part, or a thickness of a portion of the frequency adjusting layer on the inclined surface is less than that of other portions of the frequency adjusting layer. The frequency adjusting layer is disposed on a portion of the piezoelectric layer protruding from the upper electrode.