Invention Grant
- Patent Title: Page buffer circuits and nonvolatile memory devices including the same
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Application No.: US17332350Application Date: 2021-05-27
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Publication No.: US11600336B2Publication Date: 2023-03-07
- Inventor: Yongsung Cho , Byungkwan Chun
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2020-0101529 20200813,KR10-2020-0175022 20201215
- Main IPC: G11C16/24
- IPC: G11C16/24 ; G11C16/04 ; H01L23/00 ; H01L25/065 ; H01L25/18

Abstract:
A nonvolatile memory device includes a memory cell array including memory cells and a page buffer circuit. The page buffer circuit includes page buffer units and cache latches. The cache latches are spaced apart from the page buffer units in a first horizontal direction, and correspond to respective ones of the plurality of page buffer units. Each of the page buffer units includes a pass transistor connected to each sensing node and driven in response to a pass control signal. The page buffer circuit being configured to perform a data transfer operation, based on performing a first data output operation to output data, provided from a first portion of page buffer units, from a first portion of cache latches to a data input/output (I/O) line, the data transfer operation configured to dump sensed data from a second portion of page buffer units to a second portion of cache latches.
Public/Granted literature
- US2579910A Accordion folding door Public/Granted day:1951-12-25
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