Invention Grant
- Patent Title: Operation method for a memory device
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Application No.: US17249178Application Date: 2021-02-23
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Publication No.: US11600339B2Publication Date: 2023-03-07
- Inventor: Chih-Chieh Cheng , Chun-Chang Lu , Wen-Jer Tsai
- Applicant: MACRONIX INTERNATIONAL CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: G11C16/28
- IPC: G11C16/28 ; G11C16/10 ; G11C16/34 ; G11C16/30 ; G11C16/08

Abstract:
An operation method for a memory device is provided. The operation method includes: increasing a dummy word line voltage to a first dummy word line voltage during a pre-tum on period; increasing the dummy word line voltage from the first dummy word line voltage to a second dummy word line voltage during a read period; and lowering the dummy word line voltage after the read period is finished. Wherein the first dummy word line voltage is lower than the second dummy word line voltage.
Public/Granted literature
- US20220270688A1 OPERATION METHOD FOR A MEMORY DEVICE Public/Granted day:2022-08-25
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