Invention Grant
- Patent Title: Silicon film forming method and substrate processing apparatus
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Application No.: US17111867Application Date: 2020-12-04
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Publication No.: US11600490B2Publication Date: 2023-03-07
- Inventor: Mitsuhiro Okada , Tatsuya Miyahara , Keisuke Fujita
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Nath, Goldberg & Meyer
- Agent Jerald L. Meyer; Tanya E. Harkins
- Priority: JPJP2018-038719 20180305
- Main IPC: H01L21/00
- IPC: H01L21/00 ; C23C14/14 ; H01L21/02 ; C23C14/58 ; H01L21/3065 ; C23C14/54
Abstract:
There is provided a method of forming a silicon film, which includes: a film forming step of forming the silicon film on a base, the silicon film having a film thickness thicker than a desired film thickness; and an etching step of reducing the film thickness of the silicon film by supplying an etching gas containing bromine or iodine to the silicon film.
Public/Granted literature
- US20210090887A1 SILICON FILM FORMING METHOD AND SUBSTRATE PROCESSING APPARATUS Public/Granted day:2021-03-25
Information query
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