公开(公告)号：US11410847B2

公开(公告)日：2022-08-09

申请号：US16830835

申请日：2020-03-26

申请人： TOKYO ELECTRON LIMITED

发明人： Hiroyuki Hayashi ,  Sena Fujita ,  Keita Kumagai ,  Keisuke Fujita

IPC分类号： H01L21/02 ,  C23C16/40 ,  C23C16/46 ,  C23C16/455

摘要： There is provided a film forming method including: supplying a halogen-free silicon raw material gas and a halogen-containing silicon raw material gas into a processing container while lowering a temperature of a substrate accommodated in the processing container from a first temperature to a second temperature in a temperature lowering process; and supplying the halogen-free silicon raw material gas and the halogen-containing silicon raw material gas into the processing container while maintaining the temperature of the substrate at a third temperature in a temperature stabilizing process, that occurs after the temperature lowering process.

公开(公告)号：US20220238374A1

公开(公告)日：2022-07-28

申请号：US17648700

申请日：2022-01-24

申请人： Tokyo Electron Limited

发明人： Yutaka Motoyama ,  Satoshi Takagi ,  Akari Matsunaga ,  Keisuke Fujita

IPC分类号： H01L21/768 ,  C23C16/04 ,  C23C16/24 ,  H01L21/02

摘要： A method for manufacturing a semiconductor device is provided. In the method, a silicon-containing gas is supplied to a substrate having a recess in a surface thereof at a predetermined film deposition temperature, thereby depositing a first silicon film in the recess. Chlorine and hydrogen are supplied to the substrate while maintaining the predetermined film deposition temperature, thereby etching the first silicon film deposited in the recess to expand an opening width of the first silicon film. The silicon-containing gas is supplied to the substrate while maintaining the predetermined film deposition temperature, thereby further depositing a second silicon film on the first silicon film in the recess.

公开(公告)号：US20190272995A1

公开(公告)日：2019-09-05

申请号：US16291485

申请日：2019-03-04

申请人： TOKYO ELECTRON LIMITED

发明人： Mitsuhiro Okada ,  Tatsuya Miyahara ,  Keisuke Fujita

IPC分类号： H01L21/02 ,  H01L21/3065 ,  C23C14/14 ,  C23C14/54 ,  C23C14/58

摘要： There is provided a method of forming a silicon film, which includes: a film forming step of forming the silicon film on a base, the silicon film having a film thickness thicker than a desired film thickness; and an etching step of reducing the film thickness of the silicon film by supplying an etching gas containing bromine or iodine to the silicon film.

公开(公告)号：US11600490B2

公开(公告)日：2023-03-07

申请号：US17111867

申请日：2020-12-04

申请人： TOKYO ELECTRON LIMITED

发明人： Mitsuhiro Okada ,  Tatsuya Miyahara ,  Keisuke Fujita

IPC分类号： H01L21/00 ,  C23C14/14 ,  H01L21/02 ,  C23C14/58 ,  H01L21/3065 ,  C23C14/54

摘要： There is provided a method of forming a silicon film, which includes: a film forming step of forming the silicon film on a base, the silicon film having a film thickness thicker than a desired film thickness; and an etching step of reducing the film thickness of the silicon film by supplying an etching gas containing bromine or iodine to the silicon film.

公开(公告)号：US10892162B2

公开(公告)日：2021-01-12

申请号：US16291485

申请日：2019-03-04

申请人： TOKYO ELECTRON LIMITED

发明人： Mitsuhiro Okada ,  Tatsuya Miyahara ,  Keisuke Fujita

IPC分类号： H01L21/00 ,  C23C14/14 ,  H01L21/02 ,  C23C14/58 ,  H01L21/3065 ,  C23C14/54

摘要： There is provided a method of forming a silicon film, which includes: a film forming step of forming the silicon film on a base, the silicon film having a film thickness thicker than a desired film thickness; and an etching step of reducing the film thickness of the silicon film by supplying an etching gas containing bromine or iodine to the silicon film.

公开(公告)号：US11114297B2

公开(公告)日：2021-09-07

申请号：US16693748

申请日：2019-11-25

申请人： TOKYO ELECTRON LIMITED

发明人： Rui Kanemura ,  Keita Kumagai ,  Keisuke Fujita

IPC分类号： H01L21/02 ,  H01L21/66 ,  C23C16/56

摘要： According to one embodiment of the present disclosure, a method for forming a crystallized semiconductor film having a specific grain size on a substrate includes: forming a seed layer on the substrate accommodated in a processing container; vacuuming an interior of the processing container to a medium vacuum or less in a state in which the substrate, on which the seed layer is formed, is accommodated in the processing container; forming an amorphous semiconductor film on the seed layer after vacuuming the interior of the processing container; and crystallizing the amorphous semiconductor film by heat processing.

公开(公告)号：US10570508B2

公开(公告)日：2020-02-25

申请号：US15852668

申请日：2017-12-22

申请人： TOKYO ELECTRON LIMITED

发明人： Satoshi Takagi ,  Katsuhiko Komori ,  Mitsuhiro Okada ,  Masahisa Watanabe ,  Kazuya Takahashi ,  Kazuki Yano ,  Keisuke Fujita

IPC分类号： C23C16/24 ,  C23C16/455 ,  H01L21/205 ,  H01L21/22 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/67 ,  H01L21/673 ,  C23C16/46

摘要： There is provided a film forming apparatus for performing a film forming process on substrates by heating the substrates while the substrates are held in a shelf shape by a substrate holder in a vertical reaction container. The film forming apparatus includes: an exhaust part configured to evacuate the reaction container; a gas supply part configured to supply a film forming gas into the reaction container; a heat insulating member provided above or below an arrangement region of the substrates to overlap with the arrangement region and configured to thermally insulate the arrangement region from an upper region above the arrangement region or a lower region below the arrangement region; and a through-hole provided in the heat insulating member at a position overlapping with central portions of the substrates to adjust a temperature distribution in a plane of each substrate held near the heat insulating member.