Invention Grant
- Patent Title: Electrostatic chuck with reduced current leakage for hybrid laser scribing and plasma etch wafer singulation process
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Application No.: US16709522Application Date: 2019-12-10
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Publication No.: US11600492B2Publication Date: 2023-03-07
- Inventor: Sai Abhinand , Michael Sorensen , Karthik Elumalai , Dimantha Rajapaksa , Cheng Sun , James S. Papanu , Gaurav Mehta , Eng Sheng Peh , Sri Thirunavukarasu , Onkara Korasiddaramaiah
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- Main IPC: H01L21/3065
- IPC: H01L21/3065 ; H01J37/32 ; H01L21/683 ; H01L21/82
Abstract:
Electrostatic chucks with reduced current leakage and methods of dicing semiconductor wafers are described. In an example, an etch apparatus includes a chamber, and a plasma source within or coupled to the chamber. An electrostatic chuck is within the chamber. The electrostatic chuck includes a conductive pedestal having a plurality of notches at a circumferential edge thereof. The electrostatic chuck also includes a plurality of lift pins corresponding to ones of the plurality of notches.
Public/Granted literature
Information query
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