公开(公告)号：US20210175086A1

公开(公告)日：2021-06-10

申请号：US16709522

申请日：2019-12-10

Applicant: Applied Materials, Inc.

Inventor： Sai Abhinand ,  Michael Sorensen ,  Karthik Elumalai ,  Dimantha Rajapaksa ,  Cheng Sun ,  James S. Papanu ,  Gaurav Mehta ,  Eng Sheng Peh ,  Sri Thirunavukarasu ,  Onkara Korasiddaramaiah

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/683 ,  H01L21/82

Abstract: Electrostatic chucks with reduced current leakage and methods of dicing semiconductor wafers are described. In an example, an etch apparatus includes a chamber, and a plasma source within or coupled to the chamber. An electrostatic chuck is within the chamber. The electrostatic chuck includes a conductive pedestal having a plurality of notches at a circumferential edge thereof. The electrostatic chuck also includes a plurality of lift pins corresponding to ones of the plurality of notches.

公开(公告)号：US20230187215A1

公开(公告)日：2023-06-15

申请号：US18106379

申请日：2023-02-06

Applicant: Applied Materials, Inc.

Inventor： Sai Abhinand ,  Michael Sorensen ,  Karthik Elumalai ,  Dimantha Rajapaksa ,  Cheng Sun ,  James S. Papanu ,  Gaurav Mehta ,  Eng Sheng Peh ,  Sri Thirunavukarasu ,  Onkara Korasiddaramaiah

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/683 ,  H01L21/82

CPC classification number: H01L21/3065 ,  H01J37/32715 ,  H01L21/6833 ,  H01L21/82 ,  H01J37/32642 ,  H01J2237/3341

Abstract: Electrostatic chucks with reduced current leakage and methods of dicing semiconductor wafers are described. In an example, an etch apparatus includes a chamber, and a plasma source within or coupled to the chamber. An electrostatic chuck is within the chamber. The electrostatic chuck includes a conductive pedestal having a plurality of notches at a circumferential edge thereof. The electrostatic chuck also includes a plurality of lift pins corresponding to ones of the plurality of notches.

公开(公告)号：US11600492B2

公开(公告)日：2023-03-07

申请号：US16709522

申请日：2019-12-10

Applicant: Applied Materials, Inc.

Inventor： Sai Abhinand ,  Michael Sorensen ,  Karthik Elumalai ,  Dimantha Rajapaksa ,  Cheng Sun ,  James S. Papanu ,  Gaurav Mehta ,  Eng Sheng Peh ,  Sri Thirunavukarasu ,  Onkara Korasiddaramaiah

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/683 ,  H01L21/82

Abstract: Electrostatic chucks with reduced current leakage and methods of dicing semiconductor wafers are described. In an example, an etch apparatus includes a chamber, and a plasma source within or coupled to the chamber. An electrostatic chuck is within the chamber. The electrostatic chuck includes a conductive pedestal having a plurality of notches at a circumferential edge thereof. The electrostatic chuck also includes a plurality of lift pins corresponding to ones of the plurality of notches.

公开(公告)号：US20220108908A1

公开(公告)日：2022-04-07

申请号：US17064470

申请日：2020-10-06

Applicant: Applied Materials, Inc.

Inventor： Karthik Elumalai ,  Eng Sheng Peh ,  Michael Sorensen ,  Sriskantharajah Thirunavukarasu ,  Arunkumar Tatti

IPC: H01L21/683 ,  H01L21/3065 ,  H01J37/305

Abstract: Shadow ring kits and methods of dicing semiconductor wafers are described. In an example, an etch apparatus includes a chamber, and a plasma source within or coupled to the chamber. An electrostatic chuck is within the chamber, the electrostatic chuck including a conductive pedestal to support a substrate carrier sized to support a wafer having a first diameter. A shadow ring assembly is between the plasma source and the electrostatic chuck, the shadow ring assembly sized to process a wafer having a second diameter smaller than the first diameter.