公开(公告)号：US20210175086A1

公开(公告)日：2021-06-10

申请号：US16709522

申请日：2019-12-10

Applicant: Applied Materials, Inc.

Inventor： Sai Abhinand ,  Michael Sorensen ,  Karthik Elumalai ,  Dimantha Rajapaksa ,  Cheng Sun ,  James S. Papanu ,  Gaurav Mehta ,  Eng Sheng Peh ,  Sri Thirunavukarasu ,  Onkara Korasiddaramaiah

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/683 ,  H01L21/82

Abstract: Electrostatic chucks with reduced current leakage and methods of dicing semiconductor wafers are described. In an example, an etch apparatus includes a chamber, and a plasma source within or coupled to the chamber. An electrostatic chuck is within the chamber. The electrostatic chuck includes a conductive pedestal having a plurality of notches at a circumferential edge thereof. The electrostatic chuck also includes a plurality of lift pins corresponding to ones of the plurality of notches.

公开(公告)号：US11289387B2

公开(公告)日：2022-03-29

申请号：US16944285

申请日：2020-07-31

Applicant: APPLIED MATERIALS, INC.

Inventor： Prayudi Lianto ,  Sik Hin Chi ,  Shih-Chao Hung ,  Pin Gian Gan ,  Ricardo Fujii Vinluan ,  Gaurav Mehta ,  Ramesh Chidambaram ,  Guan Huei See ,  Arvind Sundarrajan ,  Upendra V. Ummethala ,  Wei Hao Kew ,  Muhammad Adli Danish Bin Abdullah ,  Michael Charles Kutney ,  Mark McTaggart Wylie ,  Amulya Ligorio Athayde ,  Glen T. Mori

IPC: H01L21/768 ,  H01L21/66 ,  H01L21/304 ,  H01L21/306 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/683

Abstract: Methods and apparatus perform backside via reveal processes using a centralized control framework for multiple process tools. In some embodiments, a method for performing a backside via reveal process may include receiving process tool operational parameters from process tools involved in the backside via reveal process by a central controller, receiving sensor metrology data from at least one or more of the process tools involved in the backside via reveal process, and altering the backside reveal process based, at least in part, on the process tool operational parameters and the sensor metrology data by adjusting two or more of the process tools involved in the backside via reveal process. The profile parameters are configured to prevent backside via breakage during a chemical mechanical polishing (CMP) process.

公开(公告)号：US20230187215A1

公开(公告)日：2023-06-15

申请号：US18106379

申请日：2023-02-06

Applicant: Applied Materials, Inc.

Inventor： Sai Abhinand ,  Michael Sorensen ,  Karthik Elumalai ,  Dimantha Rajapaksa ,  Cheng Sun ,  James S. Papanu ,  Gaurav Mehta ,  Eng Sheng Peh ,  Sri Thirunavukarasu ,  Onkara Korasiddaramaiah

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/683 ,  H01L21/82

CPC classification number: H01L21/3065 ,  H01J37/32715 ,  H01L21/6833 ,  H01L21/82 ,  H01J37/32642 ,  H01J2237/3341

Abstract: Electrostatic chucks with reduced current leakage and methods of dicing semiconductor wafers are described. In an example, an etch apparatus includes a chamber, and a plasma source within or coupled to the chamber. An electrostatic chuck is within the chamber. The electrostatic chuck includes a conductive pedestal having a plurality of notches at a circumferential edge thereof. The electrostatic chuck also includes a plurality of lift pins corresponding to ones of the plurality of notches.

公开(公告)号：US11600492B2

公开(公告)日：2023-03-07

申请号：US16709522

申请日：2019-12-10

Applicant: Applied Materials, Inc.

Inventor： Sai Abhinand ,  Michael Sorensen ,  Karthik Elumalai ,  Dimantha Rajapaksa ,  Cheng Sun ,  James S. Papanu ,  Gaurav Mehta ,  Eng Sheng Peh ,  Sri Thirunavukarasu ,  Onkara Korasiddaramaiah

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/683 ,  H01L21/82

Abstract: Electrostatic chucks with reduced current leakage and methods of dicing semiconductor wafers are described. In an example, an etch apparatus includes a chamber, and a plasma source within or coupled to the chamber. An electrostatic chuck is within the chamber. The electrostatic chuck includes a conductive pedestal having a plurality of notches at a circumferential edge thereof. The electrostatic chuck also includes a plurality of lift pins corresponding to ones of the plurality of notches.