- Patent Title: SiC epitaxial wafer and method for producing SiC epitaxial wafer
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Application No.: US17456506Application Date: 2021-11-24
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Publication No.: US11600538B2Publication Date: 2023-03-07
- Inventor: Naoto Ishibashi , Koichi Murata , Hidekazu Tsuchida
- Applicant: SHOWA DENKO K.K.
- Applicant Address: JP Tokyo
- Assignee: SHOWA DENKO K.K.
- Current Assignee: SHOWA DENKO K.K.
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JPJP2020-199012 20201130
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/66 ; C23C16/32
Abstract:
A SiC epitaxial wafer according to an embodiment includes: a SiC substrate; and a SiC epitaxial layer formed on a first surface of the SiC substrate. The in-plane uniformity of a density of Z1/2 centers of the SiC epitaxial layer is 5% or less.
Public/Granted literature
- US20220173001A1 SiC EPITAXIAL WAFER AND METHOD FOR PRODUCING SiC EPITAXIAL WAFER Public/Granted day:2022-06-02
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