Invention Grant
- Patent Title: ESD protection circuit cell
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Application No.: US17208829Application Date: 2021-03-22
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Publication No.: US11600613B2Publication Date: 2023-03-07
- Inventor: Bo-Ting Chen
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: H01L27/02
- IPC: H01L27/02 ; G06F30/39 ; H01L23/50 ; G06F119/18

Abstract:
A protection cell for a cell library. The protection cell defines a protection circuit for an IC having a driving device with a first supply voltage Vdd1 and an output, and a driven device having an input and a second supply voltage Vdd2. The protection circuit includes a first device from the group consisting of a P-diode and a gate-Vdd PMOS. The first device is coupled between a first power bus connected to Vdd2 and the input of the driven device. The input of the driven device is coupled by way of a resistor to the output of the driving device. A second device corresponding to the first device is provided, from the group consisting of an N-diode and a grounded gate NMOS. The second device is coupled between the input of the driven device and a ground bus.
Public/Granted literature
- US20210210483A1 ESD PROTECTION CIRCUIT CELL Public/Granted day:2021-07-08
Information query
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