Invention Grant
- Patent Title: Protection devices with trigger devices and methods of formation thereof
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Application No.: US16919833Application Date: 2020-07-02
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Publication No.: US11600615B2Publication Date: 2023-03-07
- Inventor: Vadim Valentinovic Vendt , Joost Adriaan Willemen , Andre Schmenn , Damian Sojka
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L27/02 ; H01L29/861 ; H01L29/66 ; H01L29/74 ; H01L29/732
Abstract:
A method of forming a semiconductor device includes forming a first vertical protection device comprising a thyristor in a substrate, forming a first lateral trigger element for triggering the first vertical protection device in the substrate, and forming an electrical path in the substrate to electrically couple the first lateral trigger element with the first vertical protection device.
Public/Granted literature
- US20200335494A1 Protection Devices with Trigger Devices and Methods of Formation Thereof Public/Granted day:2020-10-22
Information query
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