发明授权
- 专利标题: Differential cascode amplifier arrangement with reduced common mode gate RF voltage
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申请号: US17214712申请日: 2021-03-26
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公开(公告)号: US11601098B2公开(公告)日: 2023-03-07
- 发明人: Dan William Nobbe
- 申请人: pSemi Corporation
- 申请人地址: US CA San Diego
- 专利权人: pSemi Corporation
- 当前专利权人: pSemi Corporation
- 当前专利权人地址: US CA San Diego
- 代理机构: Steinfl + Bruno LLP
- 主分类号: H03F1/22
- IPC分类号: H03F1/22 ; H03F3/45 ; H03F1/32
摘要:
Methods and devices for reducing gate node instability of a differential cascode amplifier are presented. Ground return loops, and therefore corresponding parasitic inductances, are eliminated by using voltage symmetry at nodes of two cascode amplification legs of the differential cascode amplifier. Series connected capacitors are coupled between gate nodes of pairs of cascode amplifiers of the two cascode amplification legs so to create a common node connecting the two capacitors. In order to reduce peak to peak voltage variation at the common node under large signal conditions, a shunting capacitor is connected to the common node.