Invention Grant
- Patent Title: Memory device architecture using multiple physical cells per bit to improve read margin and to alleviate the need for managing demarcation read voltages
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Application No.: US17080310Application Date: 2020-10-26
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Publication No.: US11605418B2Publication Date: 2023-03-14
- Inventor: Joseph Michael McCrate , Robert John Gleixner , Hari Giduturi , Ramin Ghodsi
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Greenberg Traurig
- Main IPC: G11C13/00
- IPC: G11C13/00 ; G11C11/408 ; G11C11/4091

Abstract:
The application relates to an architecture that allows for less precision of demarcation read voltages by combining two physical memory cells into a single logical bit. Reciprocal binary values may be written into the two memory cells that make up a memory pair. When activated using bias circuitry and address decoders the memory cell pair creates current paths having currents that may be compared to detect a differential signal. The application is also directed to writing and reading memory cell pairs.
Public/Granted literature
- US20220130447A1 MEMORY DEVICE ARCHITECTURE USING MULTIPLE CELLS PER BIT Public/Granted day:2022-04-28
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