Invention Grant
- Patent Title: ESD circuit with current leakage compensation
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Application No.: US17400160Application Date: 2021-08-12
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Publication No.: US11605626B2Publication Date: 2023-03-14
- Inventor: Jian Gao , Marcin Grad
- Applicant: NXP B.V.
- Applicant Address: NL Eindhoven
- Assignee: NXP B.V.
- Current Assignee: NXP B.V.
- Current Assignee Address: NL Eindhoven
- Agent David G. Dolezal
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H05K1/02 ; H02H9/04

Abstract:
An ESD protection circuit includes a trigger transistor that is responsive to a detection signal indicating an ESD event. The trigger transistor pulls the voltage of a hold node towards a voltage of a power supply rail in response to the detection signal indicating an ESD event. The ESD protection circuit includes a replica trigger transistor whose leakage current controls current provided to the hold node after the detection signal no longer indicates an ESD event to compensate for leakage current through the trigger transistor.
Public/Granted literature
- US20230050770A1 ESD CIRCUIT WITH CURRENT LEAKAGE COMPENSATION Public/Granted day:2023-02-16
Information query
IPC分类: