公开(公告)号：US11605626B2

公开(公告)日：2023-03-14

申请号：US17400160

申请日：2021-08-12

Applicant: NXP B.V.

Inventor： Jian Gao ,  Marcin Grad

IPC: H01L27/02 ,  H05K1/02 ,  H02H9/04

Abstract: An ESD protection circuit includes a trigger transistor that is responsive to a detection signal indicating an ESD event. The trigger transistor pulls the voltage of a hold node towards a voltage of a power supply rail in response to the detection signal indicating an ESD event. The ESD protection circuit includes a replica trigger transistor whose leakage current controls current provided to the hold node after the detection signal no longer indicates an ESD event to compensate for leakage current through the trigger transistor.

公开(公告)号：US20230050770A1

公开(公告)日：2023-02-16

申请号：US17400160

申请日：2021-08-12

Applicant: NXP B.V.

Inventor： Jian Gao ,  Marcin Grad

IPC: H01L27/02 ,  H02H9/04 ,  H05K1/02

Abstract: An ESD protection circuit includes a trigger transistor that is responsive to a detection signal indicating an ESD event. The trigger transistor pulls the voltage of a hold node towards a voltage of a power supply rail in response to the detection signal indicating an ESD event. The ESD protection circuit includes a replica trigger transistor whose leakage current controls current provided to the hold node after the detection signal no longer indicates an ESD event to compensate for leakage current through the trigger transistor.