3D semiconductor structure and method of fabricating the same
Abstract:
A 3D semiconductor structure includes a buffer layer, a n-type high electron mobility transistor (HEMT) disposed on a first surface of the buffer layer, and a p-type high hole mobility transistor (HHMT) disposed on a second surface of the buffer layer opposite to the first surface.
Public/Granted literature
Information query
Patent Agency Ranking
0/0