Invention Grant
- Patent Title: 3D semiconductor structure and method of fabricating the same
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Application No.: US17516721Application Date: 2021-11-02
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Publication No.: US11605631B2Publication Date: 2023-03-14
- Inventor: Yung-Chen Chiu , Sheng-Yuan Hsueh , Kuo-Hsing Lee , Chien-Liang Wu , Chih-Kai Kang , Guan-Kai Huang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN201910862593.5 20190912
- Main IPC: H01L27/085
- IPC: H01L27/085 ; H01L27/06 ; H01L29/66 ; H01L29/778
Abstract:
A 3D semiconductor structure includes a buffer layer, a n-type high electron mobility transistor (HEMT) disposed on a first surface of the buffer layer, and a p-type high hole mobility transistor (HHMT) disposed on a second surface of the buffer layer opposite to the first surface.
Public/Granted literature
- US20220059528A1 3D SEMICONDUCTOR STRUCTURE AND METHOD OF FABRICATING THE SAME Public/Granted day:2022-02-24
Information query
IPC分类:
