- 专利标题： Semiconductor storage device and method of manufacturing the same
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申请号： US17350161申请日： 2021-06-17
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公开(公告)号： US11605646B2公开(公告)日： 2023-03-14
- 发明人: Kazuhiro Nojima , Kojiro Shimizu
- 申请人： Kioxia Corporation
- 申请人地址： JP Tokyo
- 专利权人： Kioxia Corporation
- 当前专利权人： Kioxia Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Foley & Lardner LLP
- 优先权： JPJP2018-175669 20180920
- 主分类号： H01L27/11582
- IPC分类号： H01L27/11582 ; H01L27/11573 ; H01L27/1157 ; G11C5/06 ; H01L27/11565 ; H01L27/11575
摘要：
A semiconductor storage device includes a logic circuit formed on a substrate, a first area formed on the logic circuit and has a plurality of first insulating layers and a plurality of conductive layers alternately stacked in a first direction, a plurality of memory pillars MP which extend in the first area in the first direction, a second area which is formed on the logic circuit and has the plurality of first insulating layers 33 and a plurality of second insulating layers alternately stacked in the first direction, and a contact plug CP1 which extends in the second area in the first direction and is connected to the logic circuit.
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