Invention Grant
- Patent Title: Transistor with air gap under source/drain region in bulk semiconductor substrate
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Application No.: US17155469Application Date: 2021-01-22
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Publication No.: US11605710B2Publication Date: 2023-03-14
- Inventor: Uzma B. Rana , Anthony K. Stamper , Steven M. Shank , Srikanth Srihari
- Applicant: GLOBALFOUNDRIES U.S. Inc.
- Applicant Address: US CA Santa Clara
- Assignee: GLOBALFOUNDRIES U.S. Inc.
- Current Assignee: GLOBALFOUNDRIES U.S. Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Hoffman Warnick LLC
- Agent Anthony Canale
- Priority: IN202011053972 20201211
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/78 ; H01L29/66 ; H01L29/04 ; H01L29/10

Abstract:
A transistor includes a bulk semiconductor substrate, and a first source/drain region in the bulk semiconductor substrate separated from a second source/drain region in the bulk semiconductor substrate by a channel region. A first air gap is defined in the bulk semiconductor substrate under the first source/drain region, and a second air gap is defined in the bulk semiconductor substrate under the second source/drain region. A gate is over the channel region. A spacing between the first air gap and the second air gap is greater than or equal to a length of the channel region such that the first and second air gaps are not under the channel region. The air gaps may have a rectangular cross-sectional shape. The air gaps reduce off capacitance of the bulk semiconductor structure to near semiconductor-on-insulator levels without the disadvantages of an air gap under the channel region.
Public/Granted literature
- US20220190108A1 TRANSISTOR WITH AIR GAP UNDER SOURCE/DRAIN REGION IN BULK SEMICONDUCTOR SUBSTRATE Public/Granted day:2022-06-16
Information query
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