Invention Grant
- Patent Title: Thin film transistor, method for fabricating the same, method for controlling the same, display panel and display device
-
Application No.: US16472417Application Date: 2018-12-04
-
Publication No.: US11605738B2Publication Date: 2023-03-14
- Inventor: Junjie Li , Yuanyuan Li
- Applicant: BOE Technology Group Co., Ltd.
- Applicant Address: CN Beijing
- Assignee: BOE Technology Group Co., Ltd.
- Current Assignee: BOE Technology Group Co., Ltd.
- Current Assignee Address: CN Beijing
- Agency: ArentFox Schiff LLP
- Agent Michael Fainberg
- Priority: CN201810270332.X 20180329
- International Application: PCT/CN2018/119152 WO 20181204
- International Announcement: WO2019/184428 WO 20191003
- Main IPC: H01L29/786
- IPC: H01L29/786 ; G02F1/1368 ; H01L27/32 ; H01L29/66 ; H01L29/40

Abstract:
This disclosure relates to the field of display technologies, and discloses a thin film transistor, a method for fabricating the same, a method for controlling the same, a display panel, and a display device. The thin film transistor includes: a base substrate, a semiconductor active layer on one side of the base substrate, a source electrically connected with one end of the semiconductor active layer, a drain electrically connected with the other end of the semiconductor active layer, a gate insulated from the semiconductor active layer, the source, and the drain, and a modulation electrode insulated from the semiconductor active layer, the gate, the source, and the drain. The modulation electrode is proximate to the drain, and an orthographic projection of the modulation electrode on the base substrate overlaps with an orthographic projection of the semiconductor active layer on the base substrate
Public/Granted literature
Information query
IPC分类: