发明授权
- 专利标题: Redundancy in microelectronic devices, and related methods, devices, and systems
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申请号: US17249284申请日: 2021-02-25
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公开(公告)号: US11615845B2公开(公告)日: 2023-03-28
- 发明人: Toru Ishikawa , Minari Arai
- 申请人: Micron Technology, Inc.
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: TraskBritt
- 主分类号: G11C16/08
- IPC分类号: G11C16/08 ; G11C16/10 ; G11C16/26 ; G11C29/00 ; G11C29/24
摘要:
Methods of operating a memory device are disclosed. A method may include enabling a first and second row section units a number of row section units of a memory device in response to a row address. The method may also include comparing a selected column address to a number of column addresses of defective memory cells of a first row section of the first row section unit. Moreover, in response to the selected column address matching a first column address of the number of column addresses, the method may include activating a second row section of the second row section unit, conveying a redundant column select signal to the memory array to select a redundant memory cell of the second row section. Memory devices and systems are also disclosed.