- 专利标题： Contact photolithography-based nanopatterning using photoresist features having re-entrant profiles
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申请号： US17123453申请日： 2020-12-16
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公开(公告)号： US11616129B2公开(公告)日： 2023-03-28
- 发明人: Zhenqiang Ma , Yei Hwan Jung
- 申请人： Wisconsin Alumni Research Foundation
- 申请人地址： US WI Madison
- 专利权人： Wisconsin Alumni Research Foundation
- 当前专利权人： Wisconsin Alumni Research Foundation
- 当前专利权人地址： US WI Madison
- 代理机构： Bell & Manning, LLC
- 主分类号： H01L29/423
- IPC分类号： H01L29/423 ; H01L21/28 ; H01L21/283 ; H01L21/308 ; H01L23/00 ; H01L29/778 ; H01L21/768 ; H01L29/40 ; H01L29/66 ; H01L29/20
摘要：
Patterning methods for forming patterned device substrates are provided. Also provided are devices made using the methods. The methods utilize photoresist features have re-entrant profiles to form a secondary metal hard mask that can be used to pattern an underlying device substrate.