Invention Grant
- Patent Title: Contact photolithography-based nanopatterning using photoresist features having re-entrant profiles
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Application No.: US17123453Application Date: 2020-12-16
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Publication No.: US11616129B2Publication Date: 2023-03-28
- Inventor: Zhenqiang Ma , Yei Hwan Jung
- Applicant: Wisconsin Alumni Research Foundation
- Applicant Address: US WI Madison
- Assignee: Wisconsin Alumni Research Foundation
- Current Assignee: Wisconsin Alumni Research Foundation
- Current Assignee Address: US WI Madison
- Agency: Bell & Manning, LLC
- Main IPC: H01L29/423
- IPC: H01L29/423 ; H01L21/28 ; H01L21/283 ; H01L21/308 ; H01L23/00 ; H01L29/778 ; H01L21/768 ; H01L29/40 ; H01L29/66 ; H01L29/20
Abstract:
Patterning methods for forming patterned device substrates are provided. Also provided are devices made using the methods. The methods utilize photoresist features have re-entrant profiles to form a secondary metal hard mask that can be used to pattern an underlying device substrate.
Public/Granted literature
- US20210143262A1 CONTACT PHOTOLITHOGRAPHY-BASED NANOPATTERNING USING PHOTORESIST FEATURES HAVING RE-ENTRANT PROFILES Public/Granted day:2021-05-13
Information query
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