Invention Grant
- Patent Title: Emitter structure and production method
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Application No.: US17817155Application Date: 2022-08-03
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Publication No.: US11617232B2Publication Date: 2023-03-28
- Inventor: David Tumpold , Sebastian Anzinger , Christoph Glacer
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater Matsil, LLP
- Priority: DE102018201997.5 20180208
- Main IPC: H05B3/20
- IPC: H05B3/20 ; G01J3/10 ; G01N21/17 ; G01N21/3504 ; H05B3/03

Abstract:
An emitter structure includes a substrate with a membrane arrangement. The membrane arrangement includes at least one first membrane, a first heating path and a second heating path in different substrate planes. The first heating path and the second heating path are positioned with respect to one another such that a projection of the first heating path and a projection of the second heating path onto a common plane lie at least partly next to one another in the common plane.
Public/Granted literature
- US20220377851A1 Emitter Structure and Production Method Public/Granted day:2022-11-24
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