- 专利标题: Bipolar junction transistor optical modulator
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申请号: US17227457申请日: 2021-04-12
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公开(公告)号: US11624941B2公开(公告)日: 2023-04-11
- 发明人: Rajeev J. Ram , Marc De Cea Falco , Jin Xue
- 申请人: Massachusetts Institute of Technology
- 申请人地址: US MA Cambridge
- 专利权人: Massachusetts Institute of Technology
- 当前专利权人: Massachusetts Institute of Technology
- 当前专利权人地址: US MA Cambridge
- 代理机构: Smith Baluch LLP
- 主分类号: G02F1/025
- IPC分类号: G02F1/025
摘要:
Semiconductor optical modulators are described that utilize bipolar junction transistor (BJT) structure within the optical modulator. The junctions within the BJT can be designed and biased to increase modulator efficiency and speed. An optical mode may be located in a selected region of the BJT structure to improve modulation efficiency. The BJT structure can be included in optical waveguides of interferometers and resonators to form optical modulators.
公开/授权文献
- US20210389612A1 Bipolar Junction Transistor Optical Modulator 公开/授权日:2021-12-16
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