Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
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Application No.: US16811959Application Date: 2020-03-06
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Publication No.: US11630270B2Publication Date: 2023-04-18
- Inventor: Tetsuya Iida , Yasutaka Nakashiba
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JPJP2019-044062 20190311
- Main IPC: G02B6/42
- IPC: G02B6/42
Abstract:
A semiconductor device includes a cladding layer and a first optical waveguide. The first optical waveguide is formed on the first cladding layer. An end surface of the first optical waveguide is inclined relative to a vertical line perpendicular to an upper surface of the cladding layer.
Public/Granted literature
- US20200295530A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2020-09-17
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