Invention Grant
- Patent Title: High bandwidth memory system using multilevel signaling
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Application No.: US17483010Application Date: 2021-09-23
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Publication No.: US11631444B2Publication Date: 2023-04-18
- Inventor: Byungsuk Woo , Changkyu Seol , Cheolmin Park , Sucheol Lee , Chanik Park
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2021-0010520 20210126
- Main IPC: G11C7/22
- IPC: G11C7/22 ; H01L25/065 ; G11C7/16 ; H01L27/108

Abstract:
A high bandwidth memory system includes a motherboard; and a semiconductor package coupled to the motherboard. The semiconductor package includes a package substrate mounted on the motherboard and including signal lines providing a plurality of channels; a first semiconductor device mounted on the package substrate and including a first physical layer (PHY) circuit; and a second semiconductor device mounted on the package substrate and including a second PHY circuit. The first semiconductor device and the second semiconductor device exchange a data signal with each other through the plurality of channels, the data signal is a multilevel signal having M levels, where M is a natural number greater than 2, and the first PHY circuit compensates for distortion of the channels and performs digital signal processing to compensate for a mismatch between the channels.
Public/Granted literature
- US20220238146A1 HIGH BANDWIDTH MEMORY SYSTEM USING MULTILEVEL SIGNALING Public/Granted day:2022-07-28
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