- 专利标题： Semiconductor memory device
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申请号： US16993366申请日： 2020-08-14
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公开(公告)号： US11631693B2公开(公告)日： 2023-04-18
- 发明人: Takahito Nishimura , Genki Kawaguchi , Yusuke Okumura
- 申请人： Kioxia Corporation
- 申请人地址： JP Minato-ku
- 专利权人： Kioxia Corporation
- 当前专利权人： Kioxia Corporation
- 当前专利权人地址： JP Minato-ku
- 代理机构： Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JPJP2020-044893 20200316
- 主分类号： H01L27/11582
- IPC分类号： H01L27/11582 ; H01L27/11565 ; H01L27/1157
摘要：
According to one embodiment, a semiconductor memory device includes a substrate, insulating members, first conductive layers, first pillars, and second pillars. The substrate includes a first area, a second area, block regions, and a first dummy block region. The insulating members are arranged at respective boundary portions of the block regions and the first dummy block region. The first conductive layers are partitioned by the insulating members. The first pillars penetrates the first conductive layers in a region where the first area and the block regions overlap. The second pillars penetrates at least one of the first conductive layers in a region where the first area and the first dummy block region overlap.
公开/授权文献
- US20210288064A1 SEMICONDUCTOR MEMORY DEVICE 公开/授权日：2021-09-16
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