公开(公告)号：US11631693B2

公开(公告)日：2023-04-18

申请号：US16993366

申请日：2020-08-14

申请人： Kioxia Corporation

发明人： Takahito Nishimura ,  Genki Kawaguchi ,  Yusuke Okumura

IPC分类号： H01L27/11582 ,  H01L27/11565 ,  H01L27/1157

摘要： According to one embodiment, a semiconductor memory device includes a substrate, insulating members, first conductive layers, first pillars, and second pillars. The substrate includes a first area, a second area, block regions, and a first dummy block region. The insulating members are arranged at respective boundary portions of the block regions and the first dummy block region. The first conductive layers are partitioned by the insulating members. The first pillars penetrates the first conductive layers in a region where the first area and the block regions overlap. The second pillars penetrates at least one of the first conductive layers in a region where the first area and the first dummy block region overlap.

公开(公告)号：US11587850B2

公开(公告)日：2023-02-21

申请号：US17199601

申请日：2021-03-12

申请人： Kioxia Corporation

发明人： Nozomi Karyu ,  Genki Kawaguchi

IPC分类号： H01L23/48 ,  H01L27/11582 ,  H01L27/11565 ,  H01L27/11575 ,  H01L27/1157 ,  H01L27/11524 ,  H01L27/11556

摘要： According to one embodiment, a semiconductor storage device includes: first and second plate-shaped portions which extend in a stacking direction of each layer of a first stacked body and a first direction intersecting the stacking direction and are arranged between the first stacked body and a second stacked body on both sides of the second stacked body in a second direction intersecting the stacking direction and the first direction; and an isolation layer that penetrates at least the uppermost conductive layer among a plurality of conductive layers and isolates the uppermost conductive layer in the second direction. The isolation layer extends in a portion of the first stacked body in the first direction toward the second stacked body, and is connected to a side surface of the first plate-shaped portion from a first region on an inner side of the first and second plate-shaped portions.

公开(公告)号：US11569253B2

公开(公告)日：2023-01-31

申请号：US17008975

申请日：2020-09-01

申请人： Kioxia Corporation

发明人： Takeshi Nagatomo ,  Tatsuo Izumi ,  Ryota Suzuki ,  Takuya Nishikawa ,  Yasuhito Nakajima ,  Daiki Takayama ,  Hiroaki Naito ,  Genki Kawaguchi

IPC分类号： H01L27/11582 ,  H01L27/11556 ,  H01L27/11519 ,  H01L27/11565

摘要： A semiconductor memory device includes multiple first electrode layers stacked in a first direction, multiple second electrode layers stacked in the first direction, a first columnar body extending through the multiple first electrode layers in the first direction, a second columnar body extending through the multiple second electrode layers in the first direction, a connection part connecting the first columnar body and the second columnar body, and a spacer film having an island configuration surrounding the connection part. The multiple first electrode layers and the multiple second electrode layers are arranged in the first direction, and the connection part and the spacer film are provided between the multiple first electrode layers and the multiple second electrode layers.