Invention Grant
- Patent Title: Coaxial through via with novel high isolation cross coupling method for 3D integrated circuits
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Application No.: US17182155Application Date: 2021-02-22
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Publication No.: US11637078B2Publication Date: 2023-04-25
- Inventor: Feng Wei Kuo , Wen-Shiang Liao , Chewn-Pu Jou , Huan-Neng Chen , Lan-Chou Cho , William Wu Shen
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: H01L23/66
- IPC: H01L23/66 ; H01L23/552 ; H01L23/498 ; H01L23/00 ; H01L25/18 ; H01L23/522 ; H01L25/065

Abstract:
A semiconductor package includes a first semiconductor device, a second semiconductor device vertically positioned above the first semiconductor device, and a ground shielded transmission path. The ground shielded transmission path couples the first semiconductor device to the second semiconductor device. The ground shielded transmission path includes a first signal path extending longitudinally between a first end and a second end. The first signal path includes a conductive material. A first insulating layer is disposed over the signal path longitudinally between the first end and the second end. The first insulating layer includes an electrically insulating material. A ground shielding layer is disposed over the insulating material longitudinally between the first end and the second end of the signal path. The ground shielding layer includes a conductive material coupled to ground. The ground shielding layer drives radiation signals received therein to ground to prevent induced noise in the first signal path.
Public/Granted literature
- US20210175187A1 COAXIAL THROUGH VIA WITH NOVEL HIGH ISOLATION CROSS COUPLING METHOD FOR 3D INTEGRATED CIRCUITS Public/Granted day:2021-06-10
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