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公开(公告)号：US12124088B2
公开(公告)日：2024-10-22
申请号：US18232319
申请日：2023-08-09
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Min-Hsiang Hsu , Chewn-Pu Jou , Chan-Hong Chern , Cheng-Tse Tang , Yung-Jr Hung , Lan-Chou Cho
IPC: G02B6/30
CPC classification number: G02B6/305
Abstract: Disclosed are edge couplers having a high coupling efficiency and low polarization dependent loss, and methods of making the edge couplers. In one embodiment, a semiconductor device for optical coupling is disclosed. The semiconductor device includes: a substrate; an optical waveguide over the substrate; and a plurality of layers over the optical waveguide. The plurality of layers includes a plurality of coupling pillars disposed at an edge of the semiconductor device. The plurality of coupling pillars form an edge coupler configured for optically coupling the optical waveguide to an optical fiber placed at the edge of the semiconductor device.
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公开(公告)号：US20230400639A1
公开(公告)日：2023-12-14
申请号：US18232319
申请日：2023-08-09
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Min-Hsiang HSU , Chewn-Pu Jou , Chan-Hong Chern , Cheng-Tse Tang , Yung-Jr Hung , Lan-Chou Cho
IPC: G02B6/30
CPC classification number: G02B6/305
Abstract: Disclosed are edge couplers having a high coupling efficiency and low polarization dependent loss, and methods of making the edge couplers. In one embodiment, a semiconductor device for optical coupling is disclosed. The semiconductor device includes: a substrate; an optical waveguide over the substrate; and a plurality of layers over the optical waveguide. The plurality of layers includes a plurality of coupling pillars disposed at an edge of the semiconductor device. The plurality of coupling pillars form an edge coupler configured for optically coupling the optical waveguide to an optical fiber placed at the edge of the semiconductor device.
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公开(公告)号：US11804515B2
公开(公告)日：2023-10-31
申请号：US17585372
申请日：2022-01-26
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Feng Wei Kuo , Chewn-Pu Jou , Huan-Neng Chen , Lan-Chou Cho , Robert Bogdan Staszewski
IPC: H01L23/522 , H03L7/085 , H01L49/02 , H01F27/28 , H03L7/099 , B01D1/00 , B01D1/12 , C02F1/04 , C02F11/12 , C02F11/18 , C02F101/30 , C02F103/14 , C02F103/16 , C02F103/28 , C02F103/32 , C02F103/34 , C02F103/36
CPC classification number: H01L28/10 , B01D1/0017 , B01D1/12 , C02F1/048 , C02F11/12 , C02F11/18 , H01F27/2885 , H01L23/5227 , H03L7/085 , H03L7/099 , C02F2101/301 , C02F2101/306 , C02F2103/14 , C02F2103/16 , C02F2103/28 , C02F2103/32 , C02F2103/343 , C02F2103/365 , H03L2207/50
Abstract: In an embodiment, a circuit includes: a transformer defining an inductive footprint within a first layer; a grounded shield bounded by the inductive footprint within a second layer separate from the first layer; and a circuit component bounded by the inductive footprint within a third layer separate from the second layer, wherein: the circuit component is coupled with the transformer through the second layer, and the third layer is separated from the first layer by the second layer.
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公开(公告)号：US11796739B2
公开(公告)日：2023-10-24
申请号：US17461534
申请日：2021-08-30
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Min-Hsiang Hsu , Chewn-Pu Jou , Chan-Hong Chern , Cheng-Tse Tang , Yung-Jr Hung , Lan-Chou Cho
IPC: G02B6/30
CPC classification number: G02B6/305
Abstract: Disclosed are edge couplers having a high coupling efficiency and low polarization dependent loss, and methods of making the edge couplers. In one embodiment, a semiconductor device for optical coupling is disclosed. The semiconductor device includes: a substrate; an optical waveguide over the substrate; and a plurality of layers over the optical waveguide. The plurality of layers includes a plurality of coupling pillars disposed at an edge of the semiconductor device. The plurality of coupling pillars form an edge coupler configured for optically coupling the optical waveguide to an optical fiber placed at the edge of the semiconductor device.
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5.发明公开公开(公告)号：US20230307390A1
公开(公告)日：2023-09-28
申请号：US18124484
申请日：2023-03-21
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Feng Wei KUO , Wen-Shiang Liao , Chewn-Pu Jou , Huan-Neng Chen , Lan-Chou Cho , William Wu Shen
IPC: H01L23/66 , H01L23/552 , H01L23/498 , H01L23/522 , H01L23/00 , H01L25/065 , H01L25/18
CPC classification number: H01L23/66 , H01L23/49816 , H01L23/49827 , H01L23/49833 , H01L23/49838 , H01L23/5225 , H01L23/552 , H01L24/17 , H01L25/0657 , H01L25/18 , H01L2223/6622 , H01L2223/6638 , H01L2224/16225 , H01L2924/141 , H01L2924/1421 , H01L2924/1432 , H01L2924/1434 , H01L2924/1436 , H01L2924/1443 , H01L2924/146 , H01L2924/3025
Abstract: A semiconductor package includes a first semiconductor device, a second semiconductor device vertically positioned above the first semiconductor device, and a ground shielded transmission path. The ground shielded transmission path couples the first semiconductor device to the second semiconductor device. The ground shielded transmission path includes a first signal path extending longitudinally between a first end and a second end. The first signal path includes a conductive material. A first insulating layer is disposed over the signal path longitudinally between the first end and the second end. The first insulating layer includes an electrically insulating material. A ground shielding layer is disposed over the insulating material longitudinally between the first end and the second end of the signal path. The ground shielding layer includes a conductive material coupled to ground. The ground shielding layer drives radiation signals received therein to ground to prevent induced noise in the first signal path.
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Patent Agency Ranking
公开(公告)号：US11454857B2
公开(公告)日：2022-09-27
申请号：US16952602
申请日：2020-11-19
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Huan-Neng Chen , Chewn-Pu Jou , Lan-Chou Cho , Feng-Wei Kuo
Abstract: In an embodiment, a phase shifter includes: a light input end; a light output end; a p-type semiconductor material, and an n-type semiconductor material contacting the p-type semiconductor material along a boundary area, wherein the boundary area is greater than a length from the light input end to the light output end multiplied by a core width of the phase shifter.
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公开(公告)号：US11119280B2
公开(公告)日：2021-09-14
申请号：US16654623
申请日：2019-10-16
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Feng-Wei Kuo , Lan-Chou Cho , Huan-Neng Chen , Chewn-Pu Jou , Wen-Shiang Liao
Abstract: Disclosed are grating couplers having a high coupling efficiency for optical communications. In one embodiment, an apparatus for optical coupling is disclosed. The apparatus includes: a substrate; a grating coupler comprising a plurality of coupling gratings over the substrate, wherein each of the plurality of coupling gratings extends in a first lateral direction and has a cross-section having a middle-raised shape in a second lateral direction, wherein the first and second lateral directions are parallel to a surface of the substrate and perpendicular to each other in a grating plane; and a cladding layer comprising an optical medium, wherein the cladding layer is filled in over the grating coupler.
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公开(公告)号：US20230061568A1
公开(公告)日：2023-03-02
申请号：US17461534
申请日：2021-08-30
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Min-Hsiang Hsu , Chewn-Pu Jou , Chan-Hong Chern , Cheng-Tse Tang , Yung-Jr Hung , Lan-Chou Cho
IPC: G02B6/30
Abstract: Disclosed are edge couplers having a high coupling efficiency and low polarization dependent loss, and methods of making the edge couplers. In one embodiment, a semiconductor device for optical coupling is disclosed. The semiconductor device includes: a substrate; an optical waveguide over the substrate; and a plurality of layers over the optical waveguide. The plurality of layers includes a plurality of coupling pillars disposed at an edge of the semiconductor device. The plurality of coupling pillars form an edge coupler configured for optically coupling the optical waveguide to an optical fiber placed at the edge of the semiconductor device.
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公开(公告)号：US11417596B2
公开(公告)日：2022-08-16
申请号：US16984297
申请日：2020-08-04
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Weiwei Song , Chan-Hong Chern , Feng-Wei Kuo , Lan-Chou Cho , Stefan Rusu
IPC: H01L23/52 , H01L31/18 , H01L31/0232 , G02B6/43
Abstract: In some embodiments, the present disclosure relates to an integrated chip that includes an insulator layer arranged over a substrate. Further, an upper routing structure is arranged over the insulator layer and is made of a semiconductor material. A lower optical routing structure is arranged below the substrate and is embedded in a lower dielectric structure. The integrated chip further includes an anti-reflective layer that is arranged below the substrate and directly contacts the substrate.
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公开(公告)号：US11257898B2
公开(公告)日：2022-02-22
申请号：US16908237
申请日：2020-06-22
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Feng Wei Kuo , Chewn-Pu Jou , Huan-Neng Chen , Lan-Chou Cho , Robert Bogdan Staszewski
IPC: H01L49/02 , H01L23/522 , H01F27/28 , H03L7/085 , H03L7/099 , B01D1/00 , B01D1/12 , C02F1/04 , C02F11/12 , C02F11/18 , C02F101/30 , C02F103/14 , C02F103/16 , C02F103/28 , C02F103/32 , C02F103/34 , C02F103/36
Abstract: In an embodiment, a circuit includes: a transformer defining an inductive footprint within a first layer; a grounded shield bounded by the inductive footprint within a second layer separate from the first layer; and a circuit component bounded by the inductive footprint within a third layer separate from the second layer, wherein: the circuit component is coupled with the transformer through the second layer, and the third layer is separated from the first layer by the second layer.
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