- 专利标题： Metal oxide semiconductor-controlled thyristor device having uniform turn-off characteristic and method of manufacturing the same
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申请号： US17355977申请日： 2021-06-23
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公开(公告)号： US11637192B2公开(公告)日： 2023-04-25
- 发明人: Kun Sik Park , Jong Il Won , Doo Hyung Cho , Hyun Gyu Jang , Dong Yun Jung
- 申请人： Electronics and Telecommunications Research Institute
- 申请人地址： KR Daejeon
- 专利权人： Electronics and Telecommunications Research Institute
- 当前专利权人： Electronics and Telecommunications Research Institute
- 当前专利权人地址： KR Daejeon
- 代理机构： William Park & Associates Ltd.
- 优先权： KR10-2020-0077396 20200624,KR10-2021-0078878 20210617
- 主分类号： H01L29/749
- IPC分类号： H01L29/749 ; H01L29/745 ; H01L29/66
摘要：
The present invention forms an off-FET channel having a uniform and short length by using a self-align process of a method of forming and recessing a spacer, thereby enhancing the current driving capability of an off-FET and the uniformity of a device operation.
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