- 专利标题: Semiconductor memory device and operating method thereof
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申请号: US17220284申请日: 2021-04-01
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公开(公告)号: US11640843B2公开(公告)日: 2023-05-02
- 发明人: Noh Hyup Kwak
- 申请人: SK hynix Inc.
- 申请人地址: KR Gyeonggi-do
- 专利权人: SK hynix Inc.
- 当前专利权人: SK hynix Inc.
- 当前专利权人地址: KR Gyeonggi-do
- 代理机构: IP & T Group LLP
- 优先权: KR10-2020-0157901 20201123
- 主分类号: G11C29/38
- IPC分类号: G11C29/38 ; G11C7/10 ; G11C29/14 ; G11C29/44 ; H03K3/038 ; G01R31/3185
摘要:
According to an embodiment of the present disclosure, a semiconductor memory device includes a mode register circuit including a plurality of write mode register sets for providing a plurality of setting codes or a plurality of monitoring codes; and a defect detection circuit suitable for outputting a defect determination signal by detecting any defect in the mode register circuit, based on the plurality of monitoring codes, wherein each of the write mode register sets includes: a storing circuit suitable for storing an operational code according to a mode register write command; and an output control circuit suitable for outputting the stored operational code in the storing circuit as a corresponding setting code, or inverting the stored operational code in the storing circuit to output a corresponding monitoring code, according to a test mode signal.
公开/授权文献
- US20220165346A1 SEMICONDUCTOR MEMORY DEVICE AND OPERATING METHOD THEREOF 公开/授权日:2022-05-26