Invention Grant
- Patent Title: Microelectronic devices and apparatuses having a patterned surface structure
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Application No.: US17198447Application Date: 2021-03-11
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Publication No.: US11640948B2Publication Date: 2023-05-02
- Inventor: Shing-Yih Shih , Tieh-Chiang Wu
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L23/00
- IPC: H01L23/00

Abstract:
A connector structure and a manufacturing method thereof are provided. The connector structure includes a semiconductor substrate, a metal layer, a passivation layer, and a conductive structure. The metal layer is over the semiconductor substrate. The passivation layer is over the metal layer and includes an opening. The conductive structure is in contact with the metal layer in a patterned surface structure of the conductive structure through the opening of the passivation layer.
Public/Granted literature
- US20210202417A1 MICROELECTRONIC DEVICES AND APPARATUSES HAVING A PATTERNED SURFACE STRUCTURE Public/Granted day:2021-07-01
Information query
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