Invention Grant
- Patent Title: Method to achieve tilted patterning with a through resist thickness using projection optics
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Application No.: US16721786Application Date: 2019-12-19
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Publication No.: US11644757B2Publication Date: 2023-05-09
- Inventor: Changhua Liu , Jianyong Mo , Liang Zhang
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- Main IPC: G03F7/20
- IPC: G03F7/20 ; B81B1/00 ; B81C1/00

Abstract:
Embodiments disclosed herein include lithographic patterning systems for non-orthogonal patterning and devices formed with such patterning. In an embodiment, a lithographic patterning system comprises an actinic radiation source, where the actinic radiation source is configured to propagate light along an optical axis. In an embodiment, the lithographic patterning system further comprises a mask mount, where the mask mount is configurable to orient a surface of a mask at a first angle with respect to the optical axis. In an embodiment, the lithographic patterning system further comprises a lens module, and a substrate mount, where the substrate mount is configurable to orient a surface of a substrate at a second angle with respect to the optical axis.
Public/Granted literature
- US20210191282A1 METHOD TO ACHIEVE TILTED PATTERNING WITH A THROUGH RESIST THICKNESS USING PROJECTION OPTICS Public/Granted day:2021-06-24
Information query
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