Invention Grant
- Patent Title: Semiconductor structure with super via and manufacturing method thereof
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Application No.: US17168099Application Date: 2021-02-04
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Publication No.: US11646264B2Publication Date: 2023-05-09
- Inventor: Min-Shiang Hsu , Yu-Han Tsai , Chih-Sheng Chang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN 2110011434.1 2021.01.06
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L21/768 ; H01L23/528 ; H01L21/033

Abstract:
The invention provides a semiconductor structure. The semiconductor structure includes a substrate, a first inter metal dielectric (IMD) layer, a second inter metal dielectric layer and a third inter metal dielectric layer sequentially arranged on the substrate. The first inter metal dielectric layer includes at least one first wire, the second inter metal dielectric layer includes at least one mask layer, and the third inter metal dielectric layer includes at least one third wire and a super via. The super via penetrates through the second inter metal dielectric layer, and electrically connect to the first wire and the third wire, and part of the super via directly contacts the mask layer in the second inter metal dielectric layer.
Public/Granted literature
- US20220216144A1 Semiconductor structure with super via and manufacturing method thereof Public/Granted day:2022-07-07
Information query
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