Invention Grant
- Patent Title: Buried channel semiconductor device and method for manufacturing the same
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Application No.: US17403732Application Date: 2021-08-16
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Publication No.: US11646312B2Publication Date: 2023-05-09
- Inventor: Chia-Chung Chen , Chi-Feng Huang , Victor Chiang Liang , Fu-Huan Tsai , Hsieh-Hung Hsieh , Tzu-Jin Yeh , Han-Min Tsai , Hong-Lin Chu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- The original application number of the division: US14732661 2015.06.05
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L21/8234 ; H01L29/167 ; H01L29/10 ; H01L29/423 ; H01L29/417 ; H03D7/14 ; H01L29/66 ; H01L29/78 ; H01L21/8238
Abstract:
A method for manufacturing a semiconductor device includes forming one or more fins extending in a first direction over a substrate. The one or more fins include a first region along the first direction and second regions on both sides of the first region along the first direction. A dopant is implanted in the first region of the fins but not in the second regions. A gate structure overlies the first region of the fins and source/drains are formed on the second regions of the fins.
Public/Granted literature
- US20210375862A1 BURIED CHANNEL SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2021-12-02
Information query
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