Invention Grant
- Patent Title: Power device having lateral insulated gate bipolar transistor (LIGBT) and manufacturing method thereof
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Application No.: US17187540Application Date: 2021-02-26
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Publication No.: US11646364B2Publication Date: 2023-05-09
- Inventor: Chih-Feng Huang , Lung-Sheng Lin
- Applicant: RICHTEK TECHNOLOGY CORPORATION
- Applicant Address: TW Zhubei
- Assignee: RICHTEK TECHNOLOGY CORPORATION
- Current Assignee: RICHTEK TECHNOLOGY CORPORATION
- Current Assignee Address: TW Zhubei
- Agency: Tung & Associates
- Priority: TW 9118930 2020.06.05
- Main IPC: H01L29/739
- IPC: H01L29/739 ; H01L29/66 ; H01L27/07 ; H01L27/02
Abstract:
A power device which is formed on a semiconductor substrate includes: a lateral insulated gate bipolar transistor (LIGBT), a PN diode and a clamp diode. The PN diode is connected in parallel to the LIGBT. The clamp diode has a clamp forward terminal and a clamp reverse terminal, which are electrically connected to a drain and a gate of the LIGBT, to clamp a gate voltage applied to the gate not to be higher than a predetermined voltage threshold.
Public/Granted literature
- US20210305414A1 POWER DEVICE HAVING LATERAL INSULATED GATE BIPOLAR TRANSISTOR (LIGBT) AND MANUFACTURING METHOD THEREOF Public/Granted day:2021-09-30
Information query
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