Invention Grant
- Patent Title: Dielectric on wire structure to increase processing window for overlying via
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Application No.: US17236234Application Date: 2021-04-21
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Publication No.: US11652054B2Publication Date: 2023-05-16
- Inventor: Hsin-Chieh Yao , Chung-Ju Lee , Chih Wei Lu , Hsi-Wen Tien , Yu-Teng Dai , Wei-Hao Liao
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: H01L23/535
- IPC: H01L23/535 ; H01L21/768

Abstract:
In some embodiments, the present disclosure relates to an integrated chip that includes a first interconnect dielectric layer over a substrate. An interconnect wire extends through the first interconnect dielectric layer, and a dielectric on wire structure is arranged directly over the interconnect wire. Outer sidewalls of the dielectric on wire structure are surrounded by the first interconnect dielectric layer. The integrated chip further includes a second interconnect dielectric layer arranged over the first interconnect dielectric layer, and an interconnect via that extends through the second interconnect dielectric layer and the dielectric on wire structure to contact the interconnect wire.
Public/Granted literature
- US20220344264A1 DIELECTRIC ON WIRE STRUCTURE TO INCREASE PROCESSING WINDOW FOR OVERLYING VIA Public/Granted day:2022-10-27
Information query
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