Memory might include a plurality of series-connected non-volatile memory cells, a plurality of series-connected first field-effect transistors connected in series with the plurality of series-connected non-volatile memory cells, and a second field-effect transistor, wherein the channel of the second field-effect transistor is capacitively coupled to channels of the plurality of series-connected first field-effect transistors. The memory might further include a controller configured to cause the memory to selectively activate a selected non-volatile memory cell, activate each remaining non-volatile memory cell, increase a voltage level of the respective channel of each first field-effect transistor, selectively discharge the voltage level of the respective channel of each first field-effect transistor through the selected non-volatile memory cell, and determine whether the second field-effect transistor is activated in response to a remaining voltage level of the respective channel of each first field-effect transistor.