A device includes a photodiode, a floating diffusion region, a transfer gate, and a channel region. The photodiode is disposed in a semiconductor material. The photodiode is coupled to generate charges in response to incident light. The photodiode has a substantially uniform doping profile throughout a depth of the photodiode in the semiconductor material. The floating diffusion region is disposed in the semiconductor material. The transfer gate is disposed between the photodiode and the floating diffusion region, wherein the transfer gate includes a plurality of fin structures. The channel region associated with the transfer gate is in the semiconductor material proximate to the transfer gate. The transfer gate is coupled to transfer the charge from the photodiode to the floating diffusion region through the channel region in response to a transfer signal coupled to be received by the transfer gate.