公开(公告)号：US12062670B2

公开(公告)日：2024-08-13

申请号：US17243024

申请日：2021-04-28

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Hui Zang ,  Yuanliang Liu ,  Keiji Mabuchi ,  Gang Chen ,  Bill Phan ,  Duli Mao ,  Takeshi Takeda

IPC: H01L27/146

CPC classification number: H01L27/14607 ,  H01L27/14612 ,  H01L27/1463

Abstract: An image sensor comprises a first photodiode region and circuitry. The first photodiode region is disposed within a semiconductor substrate proximate to a first side of the semiconductor substrate to form a first pixel. The first photodiode region includes a first segment coupled to a second segment. The circuitry includes at least a first electrode associated with a first transistor. The first electrode is disposed, at least in part, between the first segment and the second segment of the first photodiode region such that the circuity is at least partially surrounded by the first photodiode region when viewed from the first side of the semiconductor substrate.

公开(公告)号：US11862678B2

公开(公告)日：2024-01-02

申请号：US16905625

申请日：2020-06-18

Applicant: OmniVision Technologies, Inc.

Inventor： Yuanwei Zheng ,  Sing-Chung Hu ,  Gang Chen ,  Dyson Tai ,  Lindsay Grant

IPC: H01L27/146 ,  H01L29/06

CPC classification number: H01L29/0653 ,  H01L27/1463 ,  H01L27/14612 ,  H01L27/14643 ,  H01L27/14689

Abstract: A pixel-array substrate includes a semiconductor substrate with a pixel array, a back surface, and a front surface, and a guard ring formed of a doped semiconductor, enclosing the pixel array, and extending into the semiconductor substrate from the front surface, the back surface forming a trench extending into the semiconductor substrate, the trench overlapping the guard ring. A method for reducing leakage current into a pixel-array includes doping a semiconductor substrate to form a guard ring that extends into the semiconductor substrate from a front surface, encloses a pixel array, excludes a periphery region, and resists a flow of electric current, and forming, into a back surface of the semiconductor substrate, a trench that penetrates into the back surface and overlaps the guard ring, the guard ring and the trench configured to resist the flow of electric current between the pixel array and the periphery region.

公开(公告)号：US11810940B2

公开(公告)日：2023-11-07

申请号：US17080797

申请日：2020-10-26

Applicant: OmniVision Technologies, Inc.

Inventor： Hui Zang ,  Gang Chen

IPC: H01L27/146 ,  H01L31/102

CPC classification number: H01L27/14643 ,  H01L27/14603 ,  H01L31/102

Abstract: A pointed-trench pixel-array substrate includes a floating diffusion region and a photodiode region formed in a semiconductor substrate. The semiconductor substrate includes, between a top surface and a back surface thereof, a sidewall surface and a bottom surface defining a trench extending into the semiconductor substrate away from a planar region of the top surface surrounding the trench. In a cross-sectional plane perpendicular to the top surface and intersecting the floating diffusion region, the photodiode region, and the trench, (i) the bottom surface is V-shaped and (ii) the trench is located between the floating diffusion region and the photodiode region.

公开(公告)号：US11621336B2

公开(公告)日：2023-04-04

申请号：US17326095

申请日：2021-05-20

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Hui Zang ,  Gang Chen

IPC: H01L29/423 ,  H01L29/66 ,  H01L27/146 ,  H01L29/78

Abstract: Transistors include a pyramid-shaped gate trench defined by a triangular shape or a trapezoidal shape in a channel width plane and a trapezoidal shape in a channel length plane. Side wall portions of the pyramid-shaped gate trench form a channel having a triangular shape or a trapezoidal shape in the channel width plane. Advantageously, such transistors increase transconductance without increasing pixel width. Devices, image sensors, and pixels incorporating such transistors are also provided, in addition to methods of manufacturing the same.

公开(公告)号：US11588033B2

公开(公告)日：2023-02-21

申请号：US17326112

申请日：2021-05-20

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Hui Zang ,  Gang Chen

IPC: H01L29/423 ,  H01L27/146 ,  H01L29/78 ,  H01L29/66

Abstract: Transistors having nonplanar electron channels in the channel width plane have one or more features that cause the different parts of the nonplanar electron channel to turn on at substantially the same threshold voltage. Advantageously, such transistors have substantially uniform threshold voltage across the nonplanar electron channel. Devices, image sensors, and pixels incorporating such transistors are also provided, in addition to methods of manufacturing the same.

公开(公告)号：US20220376069A1

公开(公告)日：2022-11-24

申请号：US17326112

申请日：2021-05-20

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Hui Zang ,  Gang Chen

IPC: H01L29/423 ,  H01L27/146 ,  H01L29/66 ,  H01L29/78

Abstract: Transistors having nonplanar electron channels in the channel width plane have one or more features that cause the different parts of the nonplanar electron channel to turn on at substantially the same threshold voltage. Advantageously, such transistors have substantially uniform threshold voltage across the nonplanar electron channel. Devices, image sensors, and pixels incorporating such transistors are also provided, in addition to methods of manufacturing the same.

公开(公告)号：US11476290B2

公开(公告)日：2022-10-18

申请号：US16918929

申请日：2020-07-01

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Hui Zang ,  Gang Chen ,  Kenny Geng

IPC: H01L27/146 ,  H04N5/378

Abstract: An image sensor includes photodiodes disposed in a pixel region and proximate to a front side of a semiconductor layer. A backside metal grating is formed in a backside oxide layer disposed proximate to a backside of the semiconductor layer. A deep trench isolation (DTI) structure with a plurality of pixel region portions and an edge region portion is formed in the semiconductor layer. The pixel region portions are disposed in the pixel region of the semiconductor layer such that incident light is directed through the backside metal grating, through the backside of the semiconductor layer, and between the pixel region portions of the DTI structure to the photodiodes. The edge region portion of the DTI structure is disposed in an edge region outside of the pixel region. The edge region portion of the DTI structure is biased with a DTI bias voltage.

公开(公告)号：US11462579B2

公开(公告)日：2022-10-04

申请号：US16804671

申请日：2020-02-28

Applicant: OmniVision Technologies, Inc.

Inventor： Hui Zang ,  Gang Chen

IPC: H01L27/146 ,  H01L29/423

Abstract: A method for forming a transfer gate includes (i) forming a dielectric pillar on a surface of a semiconductor substrate and (ii) growing an epitaxial layer on the semiconductor substrate and surrounding the dielectric pillar. The dielectric pillar has a pillar height that exceeds an epitaxial-layer height of the epitaxial layer relative to the surface. The method also includes removing the dielectric pillar to yield a trench in the epitaxial layer. A pixel includes a doped semiconductor substrate having a front surface opposite a back surface. The front surface forms a trench extending a depth zT with respect to the front surface within the doped semiconductor substrate along a direction z perpendicular to the front surface and the back surface. The pixel has a dopant concentration profile, a derivative thereof with respect to direction z being discontinuous at depth zT.

公开(公告)号：US11329085B2

公开(公告)日：2022-05-10

申请号：US16548697

申请日：2019-08-22

Applicant: OmniVision Technologies, Inc.

Inventor： Qin Wang ,  Gang Chen

IPC: H01L27/146

Abstract: A pixel array includes a semiconductor substrate, a plurality of isolation layer segments, and a plurality of photodiodes. Each of the plurality of isolation layer segments extends through the semiconductor substrate in a first direction. Each of the plurality of isolation layer segments encloses a portion of the semiconductor substrate in a plane perpendicular to the first direction. The plurality of isolation layer segments form a grid that defines a plurality of isolated sections of the semiconductor substrate. The plurality of isolated sections of the semiconductor substrate include the portions of the semiconductor substrate. Each of the photodiodes is formed in a respective one of the plurality of isolated sections of the semiconductor substrate.

公开(公告)号：US20220116516A1

公开(公告)日：2022-04-14

申请号：US17558199

申请日：2021-12-21

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Gang Chen ,  Yuanmei Zheng ,  Qin Wang ,  Cunyu Yang ,  Guannan Chen ,  Duli Mao ,  Dyson H. Tai ,  Lindsay Alexander Grant

IPC: H04N5/225 ,  G02B7/00 ,  G02B5/20

Abstract: An image sensor includes a substrate. An array of photodiodes is disposed in the substrate. A plurality of spacers is arranged in a spacer pattern. At least one spacer of the plurality of spacers has an aspect ratio of 18:1 or greater. A buffer layer is disposed between the substrate and the spacer pattern. An array of color filters is disposed in the spacer pattern.