- 专利标题: Gate resistance adjustment device
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申请号: US17228093申请日: 2021-04-12
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公开(公告)号: US11658653B2公开(公告)日: 2023-05-23
- 发明人: Kazuto Takao , Yusuke Hayashi
- 申请人: KABUSHIKI KAISHA TOSHIBA
- 申请人地址: JP Tokyo
- 专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP 2019000272 2019.01.04
- 分案原申请号: US16564580 2019.09.09
- 主分类号: H03K17/082
- IPC分类号: H03K17/082 ; H03K17/687
摘要:
A gate resistance adjustment device has a waveform input unit that inputs waveforms of a drain voltage or a collector voltage and a drain current or a collector current at least one of during which a switching device is turned on and during which the switching device is turned off, an extraction unit that extracts time required for at least one of turning on or off the switching device and a steady-state drain current or a steady-state collector current of the switching device based on the waveforms input by the waveform input unit, a calculator that calculates a gate resistance of the switching device based on the time and the steady-state drain current or the steady-state collector current that are extracted by the extraction unit, and a setting unit that sets a gate resistance calculated by the calculator in the switching device.
公开/授权文献
- US20210234539A1 GATE RESISTANCE ADJUSTMENT DEVICE 公开/授权日:2021-07-29
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