Invention Grant
- Patent Title: Descending etching resistance in advanced substrate patterning
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Application No.: US17881358Application Date: 2022-08-04
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Publication No.: US11665931B2Publication Date: 2023-05-30
- Inventor: Chung-Chia Chen , Ji Young Choung , Dieter Haas , Yu-Hsin Lin , Jungmin Lee , Wen-Hao Wu , Si Kyoung Kim
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson + Sheridan, LLP
- Main IPC: H01L27/32
- IPC: H01L27/32 ; H01L51/56 ; H01L51/52 ; H10K59/122 ; H10K50/844 ; H10K71/00 ; H10K102/00

Abstract:
Embodiments described herein relate to a device comprising a substrate, a pixel-defining layer (PDL) structures disposed over the substrate and defining sub-pixels of the device, and a plurality overhang structures. Each overhang structure is defined by a top structure extending laterally past a body structure. Each body structure is disposed over an upper surface of each PDL structure. Overhang structures define a plurality of sub-pixels including a first sub-pixel and a second sub-pixel. Each sub-pixel includes an anode, an organic light-emitting diode (OLED) material, a cathode, and an encapsulation layer. The OLED materials are disposed over the first anode and extends under the overhang structures. The cathodes are disposed over the OLED materials and under the overhang structures. The encapsulation layers are disposed over the first cathode. The first encapsulation layer has a first thickness and the second encapsulation layer has a second thickness different from the first thickness.
Public/Granted literature
- US20230041252A1 DESCENDING ETCHING RESISTANCE IN ADVANCED SUBSTRATE PATTERNING Public/Granted day:2023-02-09
Information query
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