公开(公告)号：US12101947B2

公开(公告)日：2024-09-24

申请号：US17985632

申请日：2022-11-11

Applicant: Applied Materials, Inc.

Inventor： Chung-Chia Chen ,  Yu-Hsin Lin ,  Jungmin Lee ,  Takuji Kato ,  Dieter Haas ,  Si Kyoung Kim ,  Ji Young Choung

IPC: H01L29/08 ,  H10K30/82 ,  H10K50/81 ,  H10K71/20 ,  H10K102/00 ,  H10K102/10

CPC classification number: H10K30/82 ,  H10K50/81 ,  H10K71/231 ,  H10K2102/00 ,  H10K2102/102 ,  H10K2102/103

Abstract: Exemplary methods of OLED device processing are described. The methods may include forming an anode on a substrate. Forming the anode may include forming a first metal oxide material on the substrate, forming a metal layer over the first metal oxide material, forming a protective barrier over the metal layer, and forming a second metal oxide material over the amorphous protection material. The protective barrier may be an amorphous protection material overlying the metal layer.

公开(公告)号：US11665931B2

公开(公告)日：2023-05-30

申请号：US17881358

申请日：2022-08-04

Applicant: Applied Materials, Inc.

Inventor： Chung-Chia Chen ,  Ji Young Choung ,  Dieter Haas ,  Yu-Hsin Lin ,  Jungmin Lee ,  Wen-Hao Wu ,  Si Kyoung Kim

IPC: H01L27/32 ,  H01L51/56 ,  H01L51/52 ,  H10K59/122 ,  H10K50/844 ,  H10K71/00 ,  H10K102/00

CPC classification number: H10K59/122 ,  H10K50/844 ,  H10K71/00 ,  H10K2102/00

Abstract: Embodiments described herein relate to a device comprising a substrate, a pixel-defining layer (PDL) structures disposed over the substrate and defining sub-pixels of the device, and a plurality overhang structures. Each overhang structure is defined by a top structure extending laterally past a body structure. Each body structure is disposed over an upper surface of each PDL structure. Overhang structures define a plurality of sub-pixels including a first sub-pixel and a second sub-pixel. Each sub-pixel includes an anode, an organic light-emitting diode (OLED) material, a cathode, and an encapsulation layer. The OLED materials are disposed over the first anode and extends under the overhang structures. The cathodes are disposed over the OLED materials and under the overhang structures. The encapsulation layers are disposed over the first cathode. The first encapsulation layer has a first thickness and the second encapsulation layer has a second thickness different from the first thickness.

公开(公告)号：US11610954B1

公开(公告)日：2023-03-21

申请号：US17744364

申请日：2022-05-13

Applicant: Applied Materials, Inc.

Inventor： Yu-Hsin Lin ,  Ji-Young Choung ,  Chung-Chia Chen ,  Jungmin Lee ,  Wen-Hao Wu ,  Takashi Anjiki ,  Takuji Kato ,  Dieter Haas ,  Si Kyoung Kim ,  Stefan Keller

IPC: H01L27/32 ,  H01L51/52

Abstract: Embodiments described herein relate to a device including a substrate, a plurality of adjacent pixel-defining layer (PDL) structures disposed over the substrate, and a plurality of sub-pixels. Each sub-pixel includes adjacent first overhangs, adjacent second overhangs, an anode, a hole injection layer (HIL) material, an additional organic light emitting diode (OLED) material, and a cathode. Each first overhang is defined by a body structure disposed over and extending laterally past a base structure disposed over the PDL structure. Each second overhang is defined by a top structure disposed over and extending laterally past the body structure. The HIL material is disposed over and in contact with the anode and disposed under the adjacent first overhangs. The additional OLED material is disposed over the HIL material and extends under the first overhang.

公开(公告)号：US20250024693A1

公开(公告)日：2025-01-16

申请号：US18796992

申请日：2024-08-07

Applicant: Applied Materials, Inc.

Inventor： Chung-Chia Chen ,  Yu-Hsin Lin ,  Jungmin Lee ,  Takuji Kato ,  Dieter Haas ,  Si Kyoung Kim ,  Ji Young Choung

IPC: H10K30/82 ,  H10K50/81 ,  H10K71/20 ,  H10K102/00 ,  H10K102/10

Abstract: Exemplary methods of OLED device processing are described. The methods may include forming an anode on a substrate. Forming the anode may include forming a first metal oxide material on the substrate, forming a metal layer over the first metal oxide material, forming a protective barrier over the metal layer, and forming a second metal oxide material over the amorphous protection material. The protective barrier may be an amorphous protection material overlying the metal layer.

公开(公告)号：US20230389343A1

公开(公告)日：2023-11-30

申请号：US17985632

申请日：2022-11-11

Applicant: Applied Materials, Inc.

Inventor： Chung-Chia Chen ,  Yu-Hsin Lin ,  Jungmin Lee ,  Takuji Kato ,  Dieter Haas ,  Si Kyoung Kim ,  Ji Young Choung

IPC: H01L51/44 ,  H01L51/52 ,  H01L51/00

CPC classification number: H01L51/442 ,  H01L51/5206 ,  H01L51/0017 ,  H01L2251/306 ,  H01L2251/308 ,  H01L2251/303

Abstract: Exemplary methods of OLED device processing are described. The methods may include forming an anode on a substrate. Forming the anode may include forming a first metal oxide material on the substrate, forming a metal layer over the first metal oxide material, forming a protective barrier over the metal layer, and forming a second metal oxide material over the amorphous protection material. The protective barrier may be an amorphous protection material overlying the metal layer.

公开(公告)号：US11527732B1

公开(公告)日：2022-12-13

申请号：US17828360

申请日：2022-05-31

Applicant: Applied Materials, Inc.

Inventor： Chung-Chia Chen ,  Yu-Hsin Lin ,  Jungmin Lee ,  Takuji Kato ,  Dieter Haas ,  Si Kyoung Kim ,  Ji Young Choung

IPC: H01L29/08 ,  H01L51/44 ,  H01L51/52 ,  H01L51/00

Abstract: Exemplary methods of backplane processing are described. The methods may include forming a first metal oxide material on a substrate. The methods may include forming a metal layer over the first metal oxide material. The metal layer may be or include silver. The methods may include forming an amorphous protection material over the metal layer. The amorphous protection material may include a second metal oxide material. The methods may include forming a second metal oxide material over the amorphous protection material. The second metal oxide material may include a crystalline material having one or more grain boundaries. The grain boundaries may include one or more voids.