公开(公告)号：US12082447B2

公开(公告)日：2024-09-03

申请号：US18314915

申请日：2023-05-10

Applicant: Applied Materials, Inc.

Inventor： Ji-young Choung ,  Dieter Haas ,  Yu Hsin Lin ,  Jungmin Lee ,  Seong Ho Yoo ,  Si Kyoung Kim

IPC: H10K59/122 ,  H10K50/84 ,  H10K50/844 ,  H10K59/12 ,  H10K71/00

CPC classification number: H10K59/122 ,  H10K50/84 ,  H10K50/844 ,  H10K71/00 ,  H10K59/1201

Abstract: Embodiments described herein relate to sub-pixel circuits and methods of forming sub-pixel circuits that may be utilized in a display such as an organic light-emitting diode (OLED) display. The device includes a plurality of sub-pixels, each sub-pixel of the plurality of sub-pixels defined by adjacent pixel-defining layer (PDL) structures with inorganic overhang structures disposed on the PDL structures, each sub-pixel having an anode, organic light-emitting diode (OLED) material disposed on the anode, and a cathode disposed on the OLED material. The device is made by a process including the steps of: depositing the OLED material and the cathode by evaporation deposition, and depositing an encapsulation layer disposed over the cathode.

公开(公告)号：US11910657B2

公开(公告)日：2024-02-20

申请号：US18346059

申请日：2023-06-30

Applicant: Applied Materials, Inc.

Inventor： Ji-young Choung ,  Dieter Haas ,  Yu Hsin Lin ,  Jungmin Lee ,  Seong Ho Yoo ,  Si Kyoung Kim

IPC: H10K59/122 ,  H10K50/844 ,  H10K50/84 ,  H10K71/00 ,  H10K59/12

CPC classification number: H10K59/122 ,  H10K50/84 ,  H10K50/844 ,  H10K71/00 ,  H10K59/1201

Abstract: Embodiments described herein relate to sub-pixel circuits and methods of forming sub-pixel circuits that may be utilized in a display such as an organic light-emitting diode (OLED) display. The device includes a plurality of sub-pixels, each sub-pixel of the plurality of sub-pixels defined by adjacent pixel-defining layer (PDL) structures with inorganic overhang structures disposed on the PDL structures, each sub-pixel having an anode, organic light-emitting diode (OLED) material disposed on the anode, and a cathode disposed on the OLED material. The device is made by a process including the steps of: depositing the OLED material and the cathode by evaporation deposition, and depositing an encapsulation layer disposed over the cathode.

公开(公告)号：US11751438B2

公开(公告)日：2023-09-05

申请号：US17935770

申请日：2022-09-27

Applicant: Applied Materials, Inc.

Inventor： Ji Young Choung ,  Chung-chia Chen ,  Yu Hsin Lin ,  Jungmin Lee ,  Dieter Haas ,  Si Kyoung Kim

IPC: H10K59/122 ,  H10K50/84 ,  H10K71/16 ,  H10K102/10

CPC classification number: H10K59/122 ,  H10K50/84 ,  H10K71/16 ,  H10K2102/103

Abstract: Sub-pixel circuits and methods of forming sub-pixel circuits that may be utilized in an organic light-emitting diode (OLED) display are described herein. The overhang structures are permanent to the sub-pixel circuit. The overhang structures include a conductive oxide. A first configuration of the overhang structures includes a base portion and a top portion with the top portion disposed on the base portion. In a first sub-configuration, the base portion includes the conductive oxide of at least one of a TCO material or a TMO material. In a second sub-configuration, the base portion includes a metal alloy material and the conductive oxide of a metal oxide surface. A second configuration of the overhang structures includes the base portion and the top portion with a body portion disposed between the base portion and the top portion. The body portion includes the metal alloy body and the metal oxide surface.

公开(公告)号：US11690254B2

公开(公告)日：2023-06-27

申请号：US18049825

申请日：2022-10-26

Applicant: Applied Materials, Inc.

Inventor： Ji Young Choung ,  Dieter Haas ,  Yu-hsin Lin ,  Jungmin Lee ,  Seong Ho Yoo ,  Si Kyoung Kim

IPC: H10K59/122 ,  H10K50/84 ,  H10K50/844 ,  H10K71/00 ,  H10K59/12

CPC classification number: H10K59/122 ,  H10K50/84 ,  H10K50/844 ,  H10K71/00 ,  H10K59/1201

Abstract: Embodiments described herein relate to sub-pixel circuits and methods of forming sub-pixel circuits that may be utilized in a display such as an organic light-emitting diode (OLED) display. The device includes a plurality of sub-pixels, each sub-pixel of the plurality of sub-pixels defined by adjacent pixel-defining layer (PDL) structures with inorganic overhang structures disposed on the PDL structures, each sub-pixel having an anode, organic light-emitting diode (OLED) material disposed on the anode, and a cathode disposed on the OLED material. The device is made by a process including the steps of: depositing the OLED material and the cathode by evaporation deposition, and depositing an encapsulation layer disposed over the cathode.

公开(公告)号：US11626569B1

公开(公告)日：2023-04-11

申请号：US17805257

申请日：2022-06-03

Applicant: Applied Materials, Inc.

Inventor： Jungmin Lee ,  Yu Hsin Lin ,  Chung-Chia Chen ,  Ji Young Choung ,  Dieter Haas ,  Si Kyoung Kim

IPC: H01L51/52 ,  H01L27/32 ,  H01L51/56

Abstract: Embodiments described herein relate to sub-pixel circuits and methods of forming sub-pixel circuits that may be utilized in a display such as an organic light-emitting diode (OLED) display. The sub-pixel circuit includes a plurality of contact overhangs. The plurality of contact overhangs are disposed between adjacent sub-pixels of a sub-pixel circuit to be formed. The contact overhangs are formed over a metal grid exposed through a PDL structure. A cathode is deposited via evaporation deposition to be in contact with the contact overhang. The metal grid is perpendicular to a plurality of metal layers disposed on the substrate.

公开(公告)号：US11527732B1

公开(公告)日：2022-12-13

申请号：US17828360

申请日：2022-05-31

Applicant: Applied Materials, Inc.

Inventor： Chung-Chia Chen ,  Yu-Hsin Lin ,  Jungmin Lee ,  Takuji Kato ,  Dieter Haas ,  Si Kyoung Kim ,  Ji Young Choung

IPC: H01L29/08 ,  H01L51/44 ,  H01L51/52 ,  H01L51/00

Abstract: Exemplary methods of backplane processing are described. The methods may include forming a first metal oxide material on a substrate. The methods may include forming a metal layer over the first metal oxide material. The metal layer may be or include silver. The methods may include forming an amorphous protection material over the metal layer. The amorphous protection material may include a second metal oxide material. The methods may include forming a second metal oxide material over the amorphous protection material. The second metal oxide material may include a crystalline material having one or more grain boundaries. The grain boundaries may include one or more voids.

公开(公告)号：US10916761B2

公开(公告)日：2021-02-09

申请号：US16309211

申请日：2017-06-08

Applicant: Applied Materials, Inc.

Inventor： Subramanya P. Herle ,  Bernard Frey ,  Dieter Haas

IPC: H01M4/04 ,  H01M4/1395 ,  B33Y40/00 ,  H01G11/84 ,  H01M4/134 ,  H01M4/66 ,  B33Y80/00 ,  B22F3/105 ,  H01M10/0562 ,  H01M10/0563

Abstract: Implementations described herein generally relate to low melting temperature metal or alloy metal deposition and processing. More particularly, the implementations described herein relate to methods and systems for low melting temperature metal or alloy metal deposition and processing for printed electronics and electrochemical devices. In yet another implementation, a method is provided. The method comprises exposing a molten metal source to a purification process to remove unwanted quantities of contaminants, delivering the filtered molten metal to a three dimensional printing device, and forming a metal film on a substrate by printing the filtered molten metal on the substrate. The purification process comprises delivering the molten metal to a filter assembly, wherein the filter assembly includes at least one of: a skimmer device, a metal mesh filter, and a foam filter, and filtering the molten metal through the filter assembly.

公开(公告)号：US09252392B2

公开(公告)日：2016-02-02

申请号：US14203426

申请日：2014-03-10

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Kumar ,  Dieter Haas

IPC: H01L35/24 ,  H01L51/00 ,  H01L51/40 ,  H01L21/31 ,  H01L21/469 ,  H01L51/52

CPC classification number: H01L51/5253

Abstract: A method and apparatus for depositing a multilayer barrier structure is disclosed herein. In one embodiment, a thin barrier layer formed over an organic semiconductor includes a non-conformal organic layer, an inorganic layer formed over the non-conformal organic layer, a metallic layer formed over the inorganic layer and a second organic layer formed over the metallic layer. In another embodiment, a method of depositing a barrier layer includes forming an organic semiconductor device over the exposed surface of a substrate, depositing an inorganic layer using CVD, depositing a metallic layer comprising one or more metal oxide or metal nitride layers over the inorganic layer by ALD, each of the metal oxide or metal nitride layers comprising a metal, wherein the metal is selected from the group consisting of aluminum, hafnium, titanium, zirconium, silicon or combinations thereof and depositing an organic layer over the metallic layer.

Abstract translation: 本文公开了一种用于沉积多层阻挡结构的方法和装置。 在一个实施例中，形成在有机半导体上的薄势垒层包括非共形有机层，在非保形有机层上形成的无机层，形成在无机层上的金属层和形成在金属上的第二有机层 层。 在另一个实施例中，沉积阻挡层的方法包括在衬底的暴露表面上形成有机半导体器件，使用CVD沉积无机层，在无机层上沉积包含一个或多个金属氧化物或金属氮化物层的金属层 通过ALD，每个金属氧化物或金属氮化物层包含金属，其中金属选自铝，铪，钛，锆，硅或其组合，并在金属层上沉积有机层。

公开(公告)号：US20130055953A1

公开(公告)日：2013-03-07

申请号：US13664246

申请日：2012-10-30

Applicant: Applied Materials, Inc.

Inventor： Dieter Haas ,  Thomas Berger ,  Simon Lau

IPC: C23C16/458 ,  B05C13/00

CPC classification number: H01L21/68714 ,  H01L21/68 ,  Y10T29/49998

Abstract: A substrate support for supporting a substrate in a processing chamber comprises a frame for carrying the substrate, at least a first fastening means fixedly attached to the frame for aligning the substrate relative to the frame, and at least a second fastening means movably attached to the frame, the second fastening means being movable relative to the frame and/or the substrate. Furthermore, a processing device comprises an edge exclusion projecting over a portion of the surface of the substrate in order to prevent processing of the portion of the surface of the substrate. A part of the edge exclusion may be moved into a gap between the edge(s) of the substrate and the frame element of the substrate support to form a labyrinth seal between the frame element and the edge of the substrate. A method of placing the substrate on the substrate support is also disclosed.

Abstract translation: 用于在处理室中支撑衬底的衬底支撑件包括用于承载衬底的框架，至少一个固定地连接到框架上用于使衬底相对于框架对准的第一紧固装置，以及至少一个第二紧固装置， 第二紧固装置可相对于框架和/或基板移动。 此外，处理装置包括在衬底表面的一部分上突出的边缘排除，以防止衬底的表面部分的处理。 边缘排除的一部分可以移动到基板的边缘和基板支撑件的框架元件之间的间隙中，以在框架元件和基板的边缘之间形成迷宫式密封。 还公开了将衬底放置在衬底支撑件上的方法。

公开(公告)号：US12101947B2

公开(公告)日：2024-09-24

申请号：US17985632

申请日：2022-11-11

Applicant: Applied Materials, Inc.

Inventor： Chung-Chia Chen ,  Yu-Hsin Lin ,  Jungmin Lee ,  Takuji Kato ,  Dieter Haas ,  Si Kyoung Kim ,  Ji Young Choung

IPC: H01L29/08 ,  H10K30/82 ,  H10K50/81 ,  H10K71/20 ,  H10K102/00 ,  H10K102/10

CPC classification number: H10K30/82 ,  H10K50/81 ,  H10K71/231 ,  H10K2102/00 ,  H10K2102/102 ,  H10K2102/103

Abstract: Exemplary methods of OLED device processing are described. The methods may include forming an anode on a substrate. Forming the anode may include forming a first metal oxide material on the substrate, forming a metal layer over the first metal oxide material, forming a protective barrier over the metal layer, and forming a second metal oxide material over the amorphous protection material. The protective barrier may be an amorphous protection material overlying the metal layer.