Invention Grant
- Patent Title: Apparatus associated with analysis of thin film layer and manufacturing method thereof
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Application No.: US17750580Application Date: 2022-05-23
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Publication No.: US11668561B2Publication Date: 2023-06-06
- Inventor: Riikka Puurunen , Feng Gao
- Applicant: TEKNOLOGIAN TUTKIMUSKESKUS VTT OY
- Applicant Address: FI Espoo
- Assignee: CHIPMETRICS OY
- Current Assignee: CHIPMETRICS OY
- Current Assignee Address: FI Joensuu
- Agency: Carter, DeLuca & Farrell LLP
- Agent Robert P. Michal, Esq.
- Priority: FI 165361 2016.04.26
- Main IPC: G01B21/08
- IPC: G01B21/08 ; G01B21/00 ; C23C16/52 ; C23C16/04

Abstract:
An apparatus associated with an analysis of a thin film layer comprises two layer structures (100, 102) with a cavity (104) therebetween, and an opening (110) through one of the layer structures (102) to the cavity (104), the cavity (104) being configured to receive, through the opening (110), material used to form a thin film layer (900) inside the cavity (104). At least one of the two layer structures (100, 102) comprises at least one positional indicator (108) for an analysis associated with the thin film layer (900).
Public/Granted literature
- US20220290986A1 APPARATUS ASSOCIATED WITH ANALYSIS OF THIN FILM LAYER AND MANUFACTURING METHOD THEREOF Public/Granted day:2022-09-15
Information query