- 专利标题： Methods and apparatus for microwave leakage reduction for semiconductor process chambers
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申请号： US16363537申请日： 2019-03-25
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公开(公告)号： US11670525B2公开(公告)日： 2023-06-06
- 发明人: Preetham P. Rao , Ananthkrishna Jupudi , Ribhu Gautam
- 申请人： APPLIED MATERIALS, INC.
- 申请人地址： US CA Santa Clara
- 专利权人： APPLIED MATERIALS, INC.
- 当前专利权人： APPLIED MATERIALS, INC.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Moser Taboada
- 主分类号： H01L21/67
- IPC分类号： H01L21/67 ; H05B6/76 ; H05B6/64
摘要：
Methods and apparatus for reducing leakage of microwaves at a slit valve of a process chamber. A multi-frequency resonant choke around the slit valve prevents microwave energy from a band of frequencies from escaping from the slit valve. The multi-frequency resonant choke may have a sloping bottom surface or a serrated bottom surface to enable multiple frequencies to resonant in the choke, canceling a range of microwave frequencies at gaps formed by a slit valve gate.
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